Datasheet IXTA3N50D2, IXTP3N50D2 (IXYS) - 4
| Hersteller | IXYS |
| Beschreibung | Depletion Mode N-Channel MOSFET |
| Seiten / Seite | 6 / 4 — IXTA3N50D2 IXTP3N50D2. Fig. 8. RDS(on) Normalized to ID = 1.5A Value. … |
| Dateiformat / Größe | PDF / 160 Kb |
| Dokumentensprache | Englisch |
IXTA3N50D2 IXTP3N50D2. Fig. 8. RDS(on) Normalized to ID = 1.5A Value. Fig. 7. Normalized RDS(on) vs. Junction Temperature
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IXTA3N50D2 IXTP3N50D2 Fig. 8. RDS(on) Normalized to ID = 1.5A Value Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current
2.4 3.0 VGS = 0V VGS = 0V I 2.6 2.0 D = 1.5A 5V d d e e TJ = 125oC liz 2.2 liz a 1.6 a rm rm o o N N 1.8 - - 1.2 (on) (on) S S D D R 1.4 R 0.8 T 1.0 J = 25oC 0.4 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 TJ - Degrees Centigrade ID - Amperes
Fig. 9. Input Admittance Fig. 10. Transconductance
10 6 TJ 9 V = - 40oC DS = 30V VDS = 30V 5 8 25oC 7 4 125oC s s 6 n re e e p m 5 m ie 3 A S - - 4 ID T f s J = 125oC g 2 3 25oC - 40oC 2 1 1 0 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 3 4 5 6 7 8 9 10 VGS - Volts ID - Amperes
Fig. 11. Breakdown and Threshold Voltages Fig. 12. Forward Voltage Drop of vs. Junction Temperature Intrinsic Diode
1.4 10 9 VGS = -10V 1.3 8 d e 7 liz a 1.2 VGS(off) @ VDS = 25V s rm 6 o re e p - N 1.1 5 m A (off) S - 4 G IS BVDSX @ VGS = - 5V TJ = 125oC 1.0 / V 3 BV 2 TJ = 25oC 0.9 1 0.8 0 -50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9 TJ - Degrees Centigrade VSD - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.4 3.0 VGS = 0V VGS = 0V I 2.6 2.0 D = 1.5A 5V d d e e TJ = 125oC liz 2.2 liz a 1.6 a rm rm o o N N 1.8 - - 1.2 (on) (on) S S D D R 1.4 R 0.8 T 1.0 J = 25oC 0.4 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 TJ - Degrees Centigrade ID - Amperes
Fig. 9. Input Admittance Fig. 10. Transconductance
10 6 TJ 9 V = - 40oC DS = 30V VDS = 30V 5 8 25oC 7 4 125oC s s 6 n re e e p m 5 m ie 3 A S - - 4 ID T f s J = 125oC g 2 3 25oC - 40oC 2 1 1 0 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 3 4 5 6 7 8 9 10 VGS - Volts ID - Amperes
Fig. 11. Breakdown and Threshold Voltages Fig. 12. Forward Voltage Drop of vs. Junction Temperature Intrinsic Diode
1.4 10 9 VGS = -10V 1.3 8 d e 7 liz a 1.2 VGS(off) @ VDS = 25V s rm 6 o re e p - N 1.1 5 m A (off) S - 4 G IS BVDSX @ VGS = - 5V TJ = 125oC 1.0 / V 3 BV 2 TJ = 25oC 0.9 1 0.8 0 -50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9 TJ - Degrees Centigrade VSD - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.