Datasheet ADuM4121-1-EP (Analog Devices) - 3

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Enhanced Product ADuM4121-1-EP SPECIFICATIONS ELECTRICAL CHARACTERISTICS
Low-side voltages referenced to GND1. High side voltages referenced to GND2; 2.5 V ≤ VDD1 ≤ 6.5 V; 7.5 V ≤ VDD2 ≤ 35 V, TJ = −55°C to +125°C. All minimum/maximum specifications apply over the entire recommended operating range, unless otherwise noted. All typical specifications are at TJ = 25°C, VDD1 = 5.0 V, VDD2 = 15 V.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
DC SPECIFICATIONS High Side Power Supply VDD2 Input Voltage VDD2 7.5 35 V VDD2 Input Current, Quiescent IDD2(Q) 2.3 2.7 mA Logic Supply VDD1 Input Voltage VDD1 2.5 6.5 V Input Current IDD1 3.6 5 mA VI+ = high, VI− = low Logic Inputs (VI+, VI−) Input Current II+, II− −1 0.01 +1 µA Input Voltage Logic High VIH 0.7 × VDD1 V 2.5 V ≤ VDD1 ≤ 5 V 3.5 V VDD1 > 5 V Logic Low VIL 0.3 × VDD1 V 2.5 V ≤ VDD1 ≤ 5 V 1.5 V VDD1 > 5 V UVLO VDD1 Positive Going Threshold VVDD1UV+ 2.45 2.5 V Negative Going Threshold VVDD1UV− 2.3 2.35 V Hysteresis VVDD1UVH 0.1 V VDD2 Positive Going Threshold VVDD2UV+ 7.3 7.5 V Negative Going Threshold VVDD2UV− 6.9 7.1 V Hysteresis VVDD2UVH 0.2 V Internal NMOS Gate Resistance RDSON_N 0.6 1.6 Ω Tested at 250 mA, VDD2 = 15 V 0.6 1.6 Ω Tested at 1 A, VDD2 = 15 V Internal PMOS Gate Resistance RDSON_P 0.8 1.8 Ω Tested at 250 mA, VDD2 = 15 V 0.8 1.8 Ω Tested at 1 A, VDD2 = 15 V Internal Miller Clamp Resistance RDSON_MILLER 0.8 2 Ω Tested at 200 mA, VDD2 = 15 V Miller Clamp Voltage Threshold VCLP_TH 1.75 2 2.25 V Referenced to GND2, VDD2 = 15 V Peak Current IPK 2.3 A VDD2 = 12 V, 4 Ω gate resistance SWITCHING SPECIFICATIONS Pulse Width PW 50 ns C 1 1 L = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Propagation Delay Rising Edge2 tDLH 22 32 42 ns CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Falling Edge2 tDHL 30 38 53 ns CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Skew3 tPSK 22 ns CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Falling Edge4 tPSKHL 12 ns CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Rising Edge5 tPSKLH 15 ns CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Pulse Width Distortion tPWD 7 13 ns CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Output Rise/Fall Time (10% to 90%) tR/tF 11 18 26 ns CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω Rev. 0 | Page 3 of 9 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS REGULATORY INFORMATION PACKAGE CHARACTERISTICS INSULATION AND SAFETY RELATED SPECIFICATIONS DIN V VDE V 0884-10 (VDE V 0884-10) INSULATION CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE