Datasheet ADuM4138 (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungHigh Voltage, Isolated IGBT Gate Driver with Isolated Flyback Controller
Seiten / Seite24 / 4 — ADuM4138. Data Sheet. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. …
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ADuM4138. Data Sheet. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Min. Typ. Max

ADuM4138 Data Sheet SPECIFICATIONS ELECTRICAL CHARACTERISTICS Table 1 Parameter Symbol Min Typ Max

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ADuM4138 Data Sheet SPECIFICATIONS ELECTRICAL CHARACTERISTICS
Low-side voltages referenced to GND1 and high-side voltages referenced to GND2. VDD1 = 12 V, VDD2 = 16 V, TA = −40°C to +125°C, unless otherwise noted. All minimum and maximum specifications apply over the entire recommended operating junction temperature range, unless otherwise noted. All typical specifications are at TA = 25°C, VDD1 = 12 V, and VDD2 = 16 V, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
DIGITAL CONVERTER SPECIFICATIONS High-Side Power Supply Input Voltage VDD2 12 25 V Operating without flyback Input Current, Quiescent for VDD2 IDD2(Q) 14 18 mA TS1 = TS2 = open, VI+ = 0 V, VDD2 = 25 V V5_2 Regulated Output Voltage V5_2 4.9 5 5.1 V Isolated Flyback Soft Start tSS 44 50 ms Output Voltage VFB VDD2 − VDD2 VDD2 + V All FLYBACK_V codes 2.6% 2.5% 15.6 16 16.4 V For FLYBACK_V code of 0111 Flyback Operating Frequency fSW 180 200 220 kHz Maximum Duty Cycle DMAX 83.5 86 90 % On Time tMAX_ON 4.2 4.8 5.4 µs Flyback Switch RDSON Negative Channel Field Effect RDSON_SW_N 1.6 3.0 Ω SW current (ISW) = 20 mA Transistor (NFET) Positive Channel Field Effect RDSON_SW_P 1.7 2.8 Ω ISW = 20 mA Transistor (PFET) Logic Supply VDD1 Input Voltage VDD1 6.0 25 V V5_1 Regulated Output Voltage VV5_1 4.9 5.0 5.1 V No load VDD1 Input Current IDD1 4.0 5.0 mA TS1 = TS2 = open, VI+ = 0 V, TEMP_OUT and SW floating, VDD1 = 25 V, VDD2 = 25 V Logic Inputs (VI+, MOSI, SCLK, CS) Input Current II 0.1 1.0 µA Input Voltage Logic High VIH 2.5 V Logic Low VIL 0.9 V Logic Input Hysteresis VHYST 1.10 V Logic Output MISO NFET RDSON RDSON_MISO_N 9 16 Ω MISO current (IMISO) = 5 mA MISO PFET RDSON RDSON_MISO_P 12.5 22 Ω IMISO = 5 mA MISO PFET High-Z Leakage IMISO_LK_P 20.0 µA MISO = 5 V UVLO Positive Going Threshold VDD1 VVDD1UV+ 4.25 4.5 V VDD2 VVDD2UV+ 11.6 11.8 V Negative Going Threshold VDD1 VVDD1UV− 4.0 4.13 V VDD2 VVDD2UV− 11.0 11.2 V Hysteresis VDD1 VVDD1UVH 0.1 V VDD2 VVDD2UVH 0.3 V Rev. 0 | Page 4 of 24 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY FUNCTIONAL BLOCK DIAGRAM SPECIFICATIONS ELECTRICAL CHARACTERISTICS SPI TIMING SPECIFICATIONS SPI Timing Diagram PACKAGE CHARACTERISTICS REGULATORY INFORMATION (PENDING) INSULATION AND SAFETY-RELATED SPECIFICATIONS DIN V VDE V 0884-10 (VDE V 0884-10):2016-12 INSULATION CHARACTERISTICS (PENDING) RECOMMENDED OPERATING CONDITIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION PCB LAYOUT ISOLATED FLYBACK CONTROLLER SPI AND EEPROM OPERATION SPI Programming USER REGISTER MAP USER REGISTER BITS OFFSET_2[5:0] Bits GAIN_2[5:0] Bits OFFSET_1[5:0] Bits GAIN_1[5:0] Bits CONFIGURATION REGISTER BITS OT_FAULT_OP Bit OT_FAULT_SEL Bit OC_TIME_OP Bit OC_2LEV_OP Bits LOW_T_OP Bit OC_BLANK_OP Bit tBLANK[3:0] Bits ECC_OFF_OP Bit FLYBACK_V[3:0] Bits T_RAMP_OP Bit PWM_OSC Bit CONTROL REGISTER BITS ECC2_DBL_ERR Bit ECC2_SNG_ERR Bit ECC1_DBL_ERR Bit ECC1_SNG_ERR Bit PROG_BUSY Bit SIM_TRIM Bit PROPAGATION DELAY RELATED PARAMETERS PROTECTION FEATURES Primary Side UVLO Fault Reporting Overcurrent Detection High Speed, Two-Level, Turn Off Miller Clamp Desaturation Detection Thermal Shutdown Isolated Temperature Sensor POWER DISSIPATION INSULATION LIFETIME DC CORRECTNESS AND MAGNETIC FIELD IMMUNITY TYPICAL APPLICATION CIRCUIT OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS