Datasheet SBR8M100P5Q (Diodes) - 4
| Hersteller | Diodes |
| Beschreibung | 8A Sbr Super Barrier Rectifier |
| Seiten / Seite | 6 / 4 — SBR8M100P5Q. www.diodes.com |
| Dateiformat / Größe | PDF / 493 Kb |
| Dokumentensprache | Englisch |
SBR8M100P5Q. www.diodes.com
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SBR8M100P5Q
10000 ) f=1MHz F p ( E C 1000 N TAI C A P A C ON 100 TI C N U J , TC 10 0 5 10 15 20 25 30 35 40 V , DC REVERSE VOLTAGE (V) R Figure 7. Typical Junction Capacitance 1 D=0.5 D=0.9 E C D=0.3 D=0.7 N STA I 0.1 ES D=0.1 AL R D=0.05 M ER TH D=0.02 T EN 0.01 D=0.01 SI AN TR D=0.005 ,)t( Rθ (t) = r(t) * R JA θJA r D=Single Pulse Note 8 Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 8. Transient Thermal Resistance MRP (Note 8) SBR8M100P5Q 4 of 6 December 2018 Document number: DS37626 Rev. 5 - 2
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© Diodes Incorporated
10000 ) f=1MHz F p ( E C 1000 N TAI C A P A C ON 100 TI C N U J , TC 10 0 5 10 15 20 25 30 35 40 V , DC REVERSE VOLTAGE (V) R Figure 7. Typical Junction Capacitance 1 D=0.5 D=0.9 E C D=0.3 D=0.7 N STA I 0.1 ES D=0.1 AL R D=0.05 M ER TH D=0.02 T EN 0.01 D=0.01 SI AN TR D=0.005 ,)t( Rθ (t) = r(t) * R JA θJA r D=Single Pulse Note 8 Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 8. Transient Thermal Resistance MRP (Note 8) SBR8M100P5Q 4 of 6 December 2018 Document number: DS37626 Rev. 5 - 2
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© Diodes Incorporated