Datasheet IRLL110, SiHLL110 (Vishay)
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 9 / 1 — IRLL110, SiHLL110. Power MOSFET. FEATURES. PRODUCT SUMMARY. DESCRIPTION. … |
| Dateiformat / Größe | PDF / 364 Kb |
| Dokumentensprache | Englisch |
IRLL110, SiHLL110. Power MOSFET. FEATURES. PRODUCT SUMMARY. DESCRIPTION. SOT-223. ORDERING INFORMATION. Note. ABSOLUTE MAXIMUM RATINGS
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Textversion des Dokuments
IRLL110, SiHLL110
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Surface mount VDS (V) 100 • Available in tape and reel • Dynamic dV/dt rating RDS(on) () VGS = 5.0 V 0.54 • Repetitive avalanche rated Qg (Max.) (nC) 6.1 • Logic-level gate drive Qgs (nC) 2.6 • RDS(on) specified at VGS = 4 V and 5 V Available Qgd (nC) 3.3 • Fast switching Configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,
SOT-223
ruggedized device design, low on-resistance and D G cost-effectiveness. The SOT-223 package is designed for surface-mounting S using vapor phase, infrared, or wave soldering techniques. D G Its unique package design allows for easy automatic S pick-and-place as with other SOT or SOIC packages but Marking code: LB has the added advantage of improved thermal performance N-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ORDERING INFORMATION
SOT-223 SOT-223 Package Tube Tape and Reel Lead (Pb)-free and Halogen-free - SiHLL110TR-GE3 Lead (Pb)-free IRLL110PbF IRLL110TRPbF a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 TC = 25 °C 1.5 Continuous Drain Current VGS at 5.0 V ID TC = 100 °C 0.93 A Pulsed Drain Current a IDM 12 Linear Derating Factor 0.025 W/°C Linear Derating Factor (PCB Mount) e 0.017 Single Pulse Avalanche Energy b EAS 50 mJ Repetitive Avalanche Current a IAR 1.5 A Repetitive Avalanche Energy a EAR 0.31 mJ Maximum Power Dissipation TC = 25 °C 3.1 PD W Maximum Power Dissipation (PCB Mount) e TA = 25 °C 2.0 Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak Temperature) d for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 1.5 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S15-1195-Rev. F, 25-May-15
1
Document Number: 91320 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Surface mount VDS (V) 100 • Available in tape and reel • Dynamic dV/dt rating RDS(on) () VGS = 5.0 V 0.54 • Repetitive avalanche rated Qg (Max.) (nC) 6.1 • Logic-level gate drive Qgs (nC) 2.6 • RDS(on) specified at VGS = 4 V and 5 V Available Qgd (nC) 3.3 • Fast switching Configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,
SOT-223
ruggedized device design, low on-resistance and D G cost-effectiveness. The SOT-223 package is designed for surface-mounting S using vapor phase, infrared, or wave soldering techniques. D G Its unique package design allows for easy automatic S pick-and-place as with other SOT or SOIC packages but Marking code: LB has the added advantage of improved thermal performance N-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ORDERING INFORMATION
SOT-223 SOT-223 Package Tube Tape and Reel Lead (Pb)-free and Halogen-free - SiHLL110TR-GE3 Lead (Pb)-free IRLL110PbF IRLL110TRPbF a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 TC = 25 °C 1.5 Continuous Drain Current VGS at 5.0 V ID TC = 100 °C 0.93 A Pulsed Drain Current a IDM 12 Linear Derating Factor 0.025 W/°C Linear Derating Factor (PCB Mount) e 0.017 Single Pulse Avalanche Energy b EAS 50 mJ Repetitive Avalanche Current a IAR 1.5 A Repetitive Avalanche Energy a EAR 0.31 mJ Maximum Power Dissipation TC = 25 °C 3.1 PD W Maximum Power Dissipation (PCB Mount) e TA = 25 °C 2.0 Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak Temperature) d for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 1.5 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S15-1195-Rev. F, 25-May-15
1
Document Number: 91320 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000