Datasheet MLX90641 (Melexis) - 8

MLX90641 16x12 IR array
Datasheet
8. General Electrical Specifications Electrical Parameter Symbol Min. Typ. Max. Unit Condition
Supply Voltage VDD 3 3.3 3.6 V Supply Current IDD 10 12 14 mA POR level up analog VPOR_UP 2.2 2.6 V VDD rising POR level down analog VPOR_DOWN 2.55 V VDD falling POR hysteresis VPOR_hys 50 mV Default I2C address 0x01 0x33 0x7F Input high voltage V (SDA, SCL) IH 0.7*VDD V Over Ta and VDD Input low voltage V (SDA, SCL) LOW 0.3*VDD V Over Ta and VDD Over Ta and V SDA output low voltage V DD OL 0.4 V ISINK=3mA SDA leakage ISDA_leak ± 10 µA VSDA=3.6V, Ta=150°C SCL leakage ISCL_leak ± 10 µA VSCL=3.6V, Ta=150°C SDA capacitance CSDA 10 pF SCL capacitance CSCL 10 pF Acknowledge setup time TSUAC(MD) 0.45 µs Acknowledge hold time TDUAC(MD) 0.45 µs Acknowledge setup time TSUAC(SD) 0.45 µs Acknowledge hold time TDUAC(SD) 0.45 µs I2C clock frequency FI2C 0.4 1 MHz Erase/write cycles 10 times Ta = 25°C Write cell time TWRITE 5 ms Table 5 Electrical specification
NOTE 1
: For best performance it is recommended to keep the supply voltage as accurate and stable as possible to 3.3V ± 0.1V.
NOTE 2
: When a data in EEPROM cell to be changed an erase (write 0x0000) must be done prior to writing the new value. After each write at least 5ms delay is needed in order to writing process to take place.
NOTE 3
: Slave address 0x00 must be avoided.
NOTE 4
: Max EEPROM I2C speed operations to be done at 400kHz REVISION 2 – FEBRUARY 6, 2019 [DOCSERVER NR] Page 8 of 53