Datasheet HMC396 (Analog Devices) - 6

HerstellerAnalog Devices
BeschreibungInGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz
Seiten / Seite6 / 6 — HMC396. InGaP HBT GAIN BLOCK. MMIC AMPLIFIER, DC - 8 GHz. Assembly …
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HMC396. InGaP HBT GAIN BLOCK. MMIC AMPLIFIER, DC - 8 GHz. Assembly Diagram. Handling Precautions. Storage:. Cleanliness:

HMC396 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Assembly Diagram Handling Precautions Storage: Cleanliness:

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HMC396
v02.0109
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Assembly Diagram
2 IP H - C S R IE IF L P M K A OC BL IN
Handling Precautions
A Follow these precautions to avoid permanent damage.
Storage:
All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. & G
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. R
Static Sensitivity:
Follow ESD precautions to protect against ESD strikes. E
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize IV inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the R chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. D
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and fl at.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
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