Datasheet HMC397 (Analog Devices) - 3

HMC397
v03.0109
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Output P1dB vs. Temperature Psat vs. Temperature
2 20 20 16 16 IP 12 12 H +25 C 8 P1dB (dBm) Psat (dBm) 8 +85 C -55 C - C +25 C 4 +85 C 4 S -55 C R 0 0 IE 0 2 4 6 8 10 0 2 4 6 8 10 FREQUENCY (GHz) FREQUENCY (GHz) IF L P M
Power Compression @ 1 GHz Power Compression @ 7 GHz
20 20 K A 15 15 OC 10 10 5 5 BL IN 0 0 A Pout Pout -5 Gain Pout (dBm), GAIN (dB), PAE (%) -5 Gain Pout (dBm), GAIN (dB), PAE (%) PAE PAE -10 -10 & G -20 -16 -12 -8 -4 0 4 8 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) R E IV
Gain, Power, Output IP3 & Supply
R
Output IP3 vs. Temperature Current vs. Supply Voltage @ 1 GHz
) D 40 80 34 35 30 30 60 26 25 Ic q (mA) Psat (dBm), IP3 (dBm 20 40 22 IP3 (dBm) 15 +25 C 18 +85 C -55 C 10 20 Gain P1dB 14 5 Psat Icq IP3 0 0 10 GAIN (dB), P1dB (dBm), 0 2 4 6 8 10 4.5 4.75 5 5.25 5.5 FREQUENCY (GHz) Vs(V) Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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