HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTyGain Block, 0.2 - 4.0 GHzp1dB vs. Temperaturepsat vs. Temperature 30 30 25 25 20 20 (dBm) 15 (dBm) 15 9 P1dB Psat 10 10 +25C +25C +85C +85C -40C 5 -40C 5 T 0 0 m 0 1 2 3 4 0 1 2 3 4 s FREQUENCY (GHz) FREQUENCY (GHz) r - e power Compression @ 850 MHzpower Compression @ 2200 MHz w 28 32 o ) 24 ) 28 Pout p (% (% Gain E 20 24 E A PAE A 20 ), P 16 ), P 16 (dB 12 (dB r & IN IN A 12 A A 8 ), G ), G 8 e m 4 m 4 0 Pout out (dB 0 Gain out (dB P P lin -4 PAE -4 -8 -8 -20 -16 -12 -8 -4 0 4 8 12 16 -20 -16 -12 -8 -4 0 4 8 12 16 s - INPUT POWER (dBm) INPUT POWER (dBm) r ie Gain, power, Output ip3 & Supply CurrentOutput ip3 vs. input Tone powervs. Supply Voltage @ 850 MHz lif p 45 50 160 m (dBm) 140 Is 40 A IP3 40 120 ) 35 (dBm), 100 Gain I (dBm s 30 P1dB 80 ( Psat m IP3 ), Psat A 30 OIP3 m ) 60 0 dBm (dB 25 + 5 dBm 20 40 +10 dBm 1dB ), P 20 20 (dB IN 10 0 0 1 2 3 4 A G 4.5 4.75 5 5.25 5.5 FREQUENCY (GHz) Vs (Vdc) Inf F or o m rat ip o r n ifc ur e n ,is hd e e d lbiv y e Anry alo a g n D d evi cto es ips la beclie ev eo d rtd o e b r e sa: ccH ur iattte itaen M d reliic a r bl o e w . H a o v weev eC r, o n r o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other poration, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No Or P d hoe n r e O : 7 n- 81-li 3 n 2 e 9- a 4 t 7 0 www 0 • O . rdh e itt r o it n e li . n co e a m 9 - 3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 p p liocra t ia o pp n S s u @ p h por ittti : Pte. ho c n o e m : 1-800-ANALOG-D