Datasheet 2N3903, 2N3904 (ON Semiconductor)

link to page 1 link to page 3 2N3903, 2N3904 General Purpose Transistors
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• Pb−Free Packages are Available* COLLECTOR 3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE Collector−Emitter Voltage VCEO 40 Vdc 1 Collector−Base Voltage VCBO 60 Vdc EMITTER Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation PD @ TA = 25°C 625 mW Derate above 25°C 5.0 mW/°C
TO−92 CASE 29
Total Device Dissipation PD @ T
STYLE 1
C = 25°C 1.5 W Derate above 25°C 12 mW/°C 1 Operating and Storage Junction T 1 J, Tstg −55 to +150 °C 2 2 Temperature Range 3 3 STRAIGHT LEAD BENT LEAD
THERMAL CHARACTERISTICS
(Note 1) BULK PACK TAPE & REEL AMMO PACK
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
MARKING DIAGRAMS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the 2N Recommended Operating Conditions may affect device reliability. 390x 1. Indicates Data in addition to JEDEC Requirements. YWWG G x = 3 or 4 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
August, 2012 − Rev. 8 2N3903/D