Datasheet SMBT3904PN (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | NPN / PNP Silicon Switching Transistor Array |
| Seiten / Seite | 9 / 4 — SMBT3904...PN. DC current gain. Saturation voltage. Total power … |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 868 Kb |
| Dokumentensprache | Englisch |
SMBT3904...PN. DC current gain. Saturation voltage. Total power dissipation
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Textversion des Dokuments
SMBT3904...PN DC current gain
hFE = ƒ(IC)
Saturation voltage
IC = ƒ(VBEsat; VCEsat) VCE = 1 V, normalized hFE = 10 3 10 EHP00756 2 mA Ι C 102 125 °C 5 25 °C h FE V V CE BE 2 10 -55 °C 10 1 5 1 10 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 mA 0 0.2 0.4 0.6 0.8 1.0 V 1.2 IC V , V BE sat CE sat
Total power dissipation
Ptot = ƒ(TS)
Total power dissipation
Ptot = ƒ(TS) SMBT3904PN SMBT3904UPN 300 360 mW mW 250 300 225 270 200 240 tot tot P P 175 210 150 180 125 150 100 120 75 90 50 60 25 30 0 0 0 15 30 45 60 75 90 105 120 °C 150 0 15 30 45 60 75 90 105 120 °C 150 TS TS 4 2012-08-21
hFE = ƒ(IC)
Saturation voltage
IC = ƒ(VBEsat; VCEsat) VCE = 1 V, normalized hFE = 10 3 10 EHP00756 2 mA Ι C 102 125 °C 5 25 °C h FE V V CE BE 2 10 -55 °C 10 1 5 1 10 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 mA 0 0.2 0.4 0.6 0.8 1.0 V 1.2 IC V , V BE sat CE sat
Total power dissipation
Ptot = ƒ(TS)
Total power dissipation
Ptot = ƒ(TS) SMBT3904PN SMBT3904UPN 300 360 mW mW 250 300 225 270 200 240 tot tot P P 175 210 150 180 125 150 100 120 75 90 50 60 25 30 0 0 0 15 30 45 60 75 90 105 120 °C 150 0 15 30 45 60 75 90 105 120 °C 150 TS TS 4 2012-08-21