Datasheet SMBT3904PN (Infineon)
| Hersteller | Infineon |
| Beschreibung | NPN / PNP Silicon Switching Transistor Array |
| Seiten / Seite | 9 / 1 — SMBT3904...PN. NPN / PNP Silicon Switching Transistor Array. SMBT3904PN … |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 868 Kb |
| Dokumentensprache | Englisch |
SMBT3904...PN. NPN / PNP Silicon Switching Transistor Array. SMBT3904PN SMBT3904UPN. Type. Marking. Pin Configuration. Package
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SMBT3904...PN NPN / PNP Silicon Switching Transistor Array
• High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
SMBT3904PN SMBT3904UPN
C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177
Type Marking Pin Configuration Package
SMBT3904PN s3P 1=E 2=B 3=C 4=E 5=B 6=C SOT363 SMBT3904UPN s3P 1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC 200 mA Total power dissipation- Ptot mW TS ≤ 115 °C, SMBT3904PN 250 TS ≤ 105 °C, SMBT3904UPN 330 Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1 2012-08-21
• High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
SMBT3904PN SMBT3904UPN
C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177
Type Marking Pin Configuration Package
SMBT3904PN s3P 1=E 2=B 3=C 4=E 5=B 6=C SOT363 SMBT3904UPN s3P 1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC 200 mA Total power dissipation- Ptot mW TS ≤ 115 °C, SMBT3904PN 250 TS ≤ 105 °C, SMBT3904UPN 330 Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1 2012-08-21