Datasheet SMBT3906...MMBT3906 (Infineon) - 8
| Hersteller | Infineon |
| Beschreibung | PNP Silicon Switching Transistors |
| Seiten / Seite | 12 / 8 — SMBT3906...MMBT3906. Delay time. Storage time. Rise time. Fall time |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 908 Kb |
| Dokumentensprache | Englisch |
SMBT3906...MMBT3906. Delay time. Storage time. Rise time. Fall time
Modelllinie für dieses Datenblatt
Textversion des Dokuments
SMBT3906...MMBT3906 Delay time
t
Storage time
t d = ƒ(IC) stg = ƒ(IC)
Rise time
tr = ƒ(IC) EHP00772 EHP00762 10 3 10 3 ns ns t s t 25 C t r ,t r d t h = 10 d FE 125 C h = 20 FE 10 10 2 10 2 VCC = 3 V h = 20 FE 10 15 V 40 V 10 1 V BE= 2 V 10 1 0 V 10 0 10 0 10 0 5 10 1 5 10 2 mA 3 5 10 10 0 5 10 1 5 10 2 mA 3 10 Ι Ι C C
Fall time
tf = ƒ(IC)
Rise time
tr = ƒ(IC) EHP00773 EHP00764 10 3 10 3 ns 25 C ns 125 C t r t f 25 C V = 40 V V = 40 V CC CC 125 C h = 10 FE 10 2 10 2 h = 20 FE h = 10 FE 10 1 10 1 10 0 10 0 10 0 5 10 1 5 10 2 mA 3 5 10 10 0 5 10 1 5 10 2 mA 3 10 Ι Ι C C 8 2012-08-21
t
Storage time
t d = ƒ(IC) stg = ƒ(IC)
Rise time
tr = ƒ(IC) EHP00772 EHP00762 10 3 10 3 ns ns t s t 25 C t r ,t r d t h = 10 d FE 125 C h = 20 FE 10 10 2 10 2 VCC = 3 V h = 20 FE 10 15 V 40 V 10 1 V BE= 2 V 10 1 0 V 10 0 10 0 10 0 5 10 1 5 10 2 mA 3 5 10 10 0 5 10 1 5 10 2 mA 3 10 Ι Ι C C
Fall time
tf = ƒ(IC)
Rise time
tr = ƒ(IC) EHP00773 EHP00764 10 3 10 3 ns 25 C ns 125 C t r t f 25 C V = 40 V V = 40 V CC CC 125 C h = 10 FE 10 2 10 2 h = 20 FE h = 10 FE 10 1 10 1 10 0 10 0 10 0 5 10 1 5 10 2 mA 3 5 10 10 0 5 10 1 5 10 2 mA 3 10 Ι Ι C C 8 2012-08-21