Datasheet SMBT3906...MMBT3906 (Infineon) - 5
| Hersteller | Infineon |
| Beschreibung | PNP Silicon Switching Transistors |
| Seiten / Seite | 12 / 5 — SMBT3906...MMBT3906. DC current gain. Saturation voltage. Collector-base … |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 908 Kb |
| Dokumentensprache | Englisch |
SMBT3906...MMBT3906. DC current gain. Saturation voltage. Collector-base capacitance. Total power dissipation
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Textversion des Dokuments
SMBT3906...MMBT3906 DC current gain
hFE = ƒ(IC)
Saturation voltage
IC = ƒ(VBEsat; VCEsat) VCE = 1 V hFE = 10 3 10 EHP00767 2 mA Ι 10 2 125 °C C 5 25 °C h FE V V CE BE 2 10 -55 °C 10 1 5 1 10 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 mA 0 0.2 0.4 0.6 0.8 1.0 V 1.2 IC V , V BE sat CE sat
Collector-base capacitance
Ccb = ƒ(VCB)
Total power dissipation
Ptot = ƒ(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) SMBT3906 8 360 pF mW 7 300 6.5 EB 270 6 /V 240 CB 5.5 tot V P 5 210 4.5 180 4 150 3.5 120 3 CEB 90 2.5 60 2 1.5 30 CCB 1 0 0 4 8 12 16 V 22 0 15 30 45 60 75 90 105 120 °C 150 CCB/CEB TS 5 2012-08-21
hFE = ƒ(IC)
Saturation voltage
IC = ƒ(VBEsat; VCEsat) VCE = 1 V hFE = 10 3 10 EHP00767 2 mA Ι 10 2 125 °C C 5 25 °C h FE V V CE BE 2 10 -55 °C 10 1 5 1 10 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 mA 0 0.2 0.4 0.6 0.8 1.0 V 1.2 IC V , V BE sat CE sat
Collector-base capacitance
Ccb = ƒ(VCB)
Total power dissipation
Ptot = ƒ(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) SMBT3906 8 360 pF mW 7 300 6.5 EB 270 6 /V 240 CB 5.5 tot V P 5 210 4.5 180 4 150 3.5 120 3 CEB 90 2.5 60 2 1.5 30 CCB 1 0 0 4 8 12 16 V 22 0 15 30 45 60 75 90 105 120 °C 150 CCB/CEB TS 5 2012-08-21