Datasheet SMBT3904 / MMBT3904 (Infineon) - 5
| Hersteller | Infineon |
| Beschreibung | NPN Silicon Switching Transistors |
| Seiten / Seite | 11 / 5 — SMBT3904...MMBT3904. DC current gain. Saturation voltage. Collector-base … |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 883 Kb |
| Dokumentensprache | Englisch |
SMBT3904...MMBT3904. DC current gain. Saturation voltage. Collector-base capacitance. Total power dissipation
Modelllinie für dieses Datenblatt
Textversion des Dokuments
SMBT3904...MMBT3904 DC current gain
hFE = ƒ(IC)
Saturation voltage
IC = ƒ(VBEsat; VCEsat) VCE = 1 V, normalized hFE = 10 3 10 EHP00756 2 mA Ι C 102 125 °C 5 h FE 25 °C V V CE BE 2 10 -55 °C 10 1 5 1 10 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 mA 0 0.2 0.4 0.6 0.8 1.0 V 1.2 IC V , V BE sat CE sat
Collector-base capacitance
Ccb = ƒ(VCB)
Total power dissipation
Ptot = ƒ(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) SMBT3904/MMBT3904 9 360 mW pF 300 ) 7 EB 270 (C 6 240 CB tot C P 210 5 CEB 180 4 150 3 120 90 2 60 CCB 1 30 0 0 0 4 8 12 16 A 22 0 15 30 45 60 75 90 105 120 °C 150 VCB(VEB TS 5 2012-08-21
hFE = ƒ(IC)
Saturation voltage
IC = ƒ(VBEsat; VCEsat) VCE = 1 V, normalized hFE = 10 3 10 EHP00756 2 mA Ι C 102 125 °C 5 h FE 25 °C V V CE BE 2 10 -55 °C 10 1 5 1 10 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 mA 0 0.2 0.4 0.6 0.8 1.0 V 1.2 IC V , V BE sat CE sat
Collector-base capacitance
Ccb = ƒ(VCB)
Total power dissipation
Ptot = ƒ(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) SMBT3904/MMBT3904 9 360 mW pF 300 ) 7 EB 270 (C 6 240 CB tot C P 210 5 CEB 180 4 150 3 120 90 2 60 CCB 1 30 0 0 0 4 8 12 16 A 22 0 15 30 45 60 75 90 105 120 °C 150 VCB(VEB TS 5 2012-08-21