Datasheet MMBT3904T (Diodes) - 3

MMBT3904T Electrical Characteristics
(@TA = +25°C unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage BVCBO 60  V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 40  V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6  V IE = 10µA, IC = 0 Collector Cutoff Current ICEX  50 nA VCE = 30V, VEB(OFF) = 3V Base Cutoff Current IBL  50 nA VCE = 30V, VEB(OFF) = 3V
ON CHARACTERISTICS (Note 7)
40  IC = 100µA, VCE = 1V 70  IC = 1mA, VCE = 1V DC Current Gain h  FE 100 300 IC = 10mA, VCE = 1V 60  IC = 50mA, VCE = 1V 30  IC = 100mA, VCE = 1V 0.20 I Collector-Emitter Saturation Voltage V C = 10mA, IB = 1mA CE(SAT)  V 0.30 IC = 50mA, IB = 5mA 0.65 0.85 I Base-Emitter Saturation Voltage V C = 10mA, IB = 1mA BE(SAT)  V 0.95 IC = 50mA, IB = 5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance COBO  4 pF VCB = 5V, f = 1.0MHz, IE = 0 Input Capacitance CIBO  8 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hIE 1 10 kΩ Voltage Feedback Ratio hRE 0.5 8.0 x 10-4 VCE = 10V, IC = 1mA, Small Signal Current Gain h f = 1.0MHz FE 100 400  Output Admittance hOE 1 40 µS V Current Gain-Bandwidth Product f CE = 20V, IC = 10mA, T 300  MHz f = 100MHz V Noise Figure NF  5 dB CC = 5V, IC = 100A, RS = 1kΩ, f = 1MHz
SWITCHING CHARACTERISTICS
Delay Time tD  35 ns VCC = 3V, IC = 10mA, Rise Time V t BE(OFF) = -0.5V, IB1 = 1mA R  35 ns Storage Time tS  200 ns VCC = 3.0V, IC = 10mA Fall Time tF  50 ns IB1 =- IB2 = 1.0mA Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBT3904T 3 of 6 April 2016 Document number: DS30270 Rev. 10 - 2
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