Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 9

HerstellerON Semiconductor
BeschreibungNPN and PNP Bipolar Transistor
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DokumentenspracheEnglisch

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. MMBT3906WT1, SMMBT3906WT1

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1

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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1
3 V 3 V < 1 ns +9.1 V 275 275 < 1 ns 10 k 10 k 0 CS < 4 pF* 1N916 CS < 4 pF* +10.6 V 300 ns 10 < t1 < 500 ms t 10.9 V DUTY CYCLE = 2% 1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors
Figure 22. Delay and Rise Time Figure 23. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 500 500 I MMBT3906WT1 300 C/IB = 10 V MMBT3906WT1 300 CC = 40 V I 200 200 B1 = IB2 IC/IB = 20 100 100 70 70 t 50 r @ VCC = 3.0 V TIME (ns) 50 ALL I TIME (ns) 30 15 V 30 C/IB = 10 f 20 t , F 20 40 V 10 2.0 V 10 7 t 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 24. Turn −On Time Figure 25. Fall Time TYPICAL AUDIO SMALL− SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 5.0 12 SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA IC = 1.0 mA 10 4.0 IC = 0.5 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA 8.0 3.0 SOURCE RESISTANCE = 2.0 k I 6.0 C = 50 mA 2.0 , NOISE FIGURE (dB) , NOISE FIGURE (dB) 4.0 IC = 50 mA NF NF 1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 2.0 IC = 100 mA MMBT3906WT1 MMBT3906WT1 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (kW)
Figure 26. Figure 27. www.onsemi.com 9