Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 5

HerstellerON Semiconductor
BeschreibungNPN and PNP Bipolar Transistor
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. MMBT3904WT1, SMMBT3904WT1

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1

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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 500 500 300 IC/IB = 10 300 VCC = 40 V I 200 200 C/IB = 10 100 100 70 t 70 r @ VCC = 3.0 V 50 50 TIME (ns) TIME (ns) 30 30 20 40 V r 20 t , RISE 15 V 10 MMBT3904WT1 10 MMBT3904WT1 7 2.0 V 7 td @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Turn −On Time Figure 4. Rise Time
500 500 t′ 300 s = ts - 1/8 tf 300 VCC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL 30 IC/IB = 10 30 I ORAGE f C/IB = 10 20 t , F 20 t , ST′ s 10 10 MMBT3904WT1 MMBT3904WT1 7 7 5 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Storage Time Figure 6. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 W f = 1.0 kHz I 12 C = 1.0 mA 10 IC = 1.0 mA 10 IC = 0.5 mA 8 SOURCE RESISTANCE = 200 W IC = 50 mA IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 100 mA 6 IC = 50 mA , NOISE FIGURE (dB) 4 , NOISE FIGURE (dB) NF NF 4 2 SOURCE RESISTANCE = 500 W 2 IC = 100 mA MMBT3904WT1 MMBT3904WT1 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 7. Noise Figure Figure 8. Noise Figure www.onsemi.com 5