Datasheet DGTD120T25S1PT (Diodes) - 3

HerstellerDiodes
Beschreibung1200V Field Stop IGBT
Seiten / Seite10 / 3 — DGTD120T25S1PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. …
Dateiformat / GrößePDF / 1.7 Mb
DokumentenspracheEnglisch

DGTD120T25S1PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. Max. Unit. Condition. STATIC CHARACTERISTICS

DGTD120T25S1PT Electrical Characteristics Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS

Modelllinie für dieses Datenblatt

Textversion des Dokuments

DGTD120T25S1PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 1200 – – V IC = 500µA, VGE = 0V T – vj = 25°C 2.00 2.40 Collector-Emitter Saturation Voltage Tvj = 150°C VCE(sat) – 2.40 – V IC = 25A, VGE = 15V Tvj = 175°C – 2.50 – T – 2.10 2.60 Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 12.5A Tvj = 175°C – 1.90 – Tvj = 25°C – 2.50 3.00 Diode Forward Voltage Tvj = 150°C VF – 2.55 – V VGE = 0V, IF = 25A Tvj = 175°C – 2.45 – Gate-Emitter Threshold Voltage VGE(th) 5.0 6.0 7.0 V VCE = VGE, IC = 0.85mA T – – 250 Zero Gate Voltage Collector Current vj = 25°C ICES µA Tvj = 175°C – – 2500 VCE = 1200V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±250 nA VGE = 20V, VCE = 0V Transconductance gfs – 16 – S VCE = 20V, IC = 25A
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 204 – Gate-Emitter Charge Qge – 34 – nC VCE = 960V, IC = 25A, VGE = 15V Gate-Collector Charge Qgc – 94 – Input Capacitance Cies – 3942 – V Reverse Transfer Capacitance Cres – 72 – pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes – 142 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH – Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 600V, IC(SC) – 121 – A Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 10µs, Tvj = 175°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 73 – Rise time tr – 41 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 269 – IC = 25A, RG = 23Ω, Fall Time tf – 39 – Inductive Load, Turn-on Switching Energy Eon – 1.44 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.55 – mJ Total Switching Energy Ets – 1.99 – Reverse Recovery Time trr – 100 – ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current Irr – 17 – A VR = 600V, Reverse Recovery Charge Qrr – 0.85 – µC Tvj = 25°C Rate Of Fall Of Reverse Current During tb dirr/dt – -376 – A/µs Turn-on Delay Time td(on) – 65 – Rise time tr – 45 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 292 – IC = 25A, RG = 23Ω, Fall Time tf – 75 – Inductive Load, Turn-on Switching Energy Eon – 2.43 – Tvj = 175°C Turn-off Switching Energy Eoff – 1.09 – mJ Total Switching Energy Ets – 3.52 – Reverse Recovery Time trr – 150 – ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current Irr – 25 – A VR = 600V, Reverse Recovery Charge Qrr – 1.85 – µC Tvj = 175°C Rate Of Fall Of Reverse Current During tb dirr/dt – -374 – A/µs DGTD120T25S1PT 3 of 10 March 2018 Document Number DS39659 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated