Datasheet ZTX749 (Diodes) - 3

HerstellerDiodes
BeschreibungSilicon planar medium power PNP transistor
Seiten / Seite3 / 3 — TYPICAL CHARACTERISTICS. VCE(sat) v IC. Switching Speeds. hFE v IC. …
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DokumentenspracheEnglisch

TYPICAL CHARACTERISTICS. VCE(sat) v IC. Switching Speeds. hFE v IC. VBE(sat) v IC. VBE(on) v IC. Safe Operating Area

TYPICAL CHARACTERISTICS VCE(sat) v IC Switching Speeds hFE v IC VBE(sat) v IC VBE(on) v IC Safe Operating Area

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ZTX749
TYPICAL CHARACTERISTICS
td tr 1.8 tf IB1=IB2=IC/10 ns V 1.6 160 CE=-10V ts 1.4 140 ns 1200 1.2 120 ts olts) 1.0 1000 100 tf 80 - (V 0.8 ) ta 600 60 0.6 (s IC/IB=100 Switching time CE 0.4 40 tr td V 0.2 200 20 IC/IB=10 0 0 0.001 0.01 0.1 0.01 0.1 1 10 1 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC Switching Speeds
1.2 200 1.0 VCE=2V 160 IC/IB=10 0.8 olts) Gain - 120 - (V FE ) h t a 0.6 IC/IB=100 (s 80 BE V 0.4 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC VBE(sat) v IC
Single Pulse Test at Tamb=25°C 10 1.2 ) s 1.0 Amp( VCE=2V nt 1.0 err olts) 0.8 u (V C D.C. - r 1s to 100ms BE c 0.6 10ms V lel 0.1 o 1.0ms C- 0.4 CI 0.001 0.01 0.1 1 10 0.01 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
VBE(on) v IC Safe Operating Area
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