Datasheet MTD20P06HDL (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | Power MOSFET 60 V, 20 A, Logic Level, P-Channel DPAK |
| Seiten / Seite | 8 / 2 — MTD20P06HDL. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. … |
| Revision | 6 |
| Dateiformat / Größe | PDF / 88 Kb |
| Dokumentensprache | Englisch |
MTD20P06HDL. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
link to page 2 link to page 2
MTD20P06HDL ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 mAdc) 60 − − Temperature Coefficient (Positive) − 81.3 − mV/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 60 Vdc, VGS = 0 Vdc) − − 1.0 (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 10 Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 250 mAdc) 1.0 1.7 2.0 Temperature Coefficient (Negative) − 3.9 − mV/°C Static Drain−Source On−Resistance RDS(on) − 143 175 mW (VGS = 5.0 Vdc, ID = 7.5 Adc) Drain−Source On−Voltage (VGS = 5.0 Vdc) VDS(on) Vdc (ID = 15 Adc) − 2.3 3.0 (ID = 7.5 Adc, TJ = 125°C) − 1.6 2.0 Forward Transconductance (VDS = 10 Vdc, ID = 7.5 Adc) gFS 9.0 11 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 850 1190 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 210 290 Reverse Transfer Capacitance Crss − 66 130
SWITCHING CHARACTERISTICS
(Note 4) Turn−On Delay Time td(on) − 19 38 ns Rise Time t (V r − 175 350 DS = 30 Vdc, ID = 15 Adc, V Turn−Off Delay Time GS = 5.0 Vdc,RG = 9.1 W) td(off) − 41 82 Fall Time tf − 68 136 Gate Charge QT − 20.6 29 nC Q (V 1 − 3.7 − DS = 48 Vdc, ID = 15 Adc, VGS = 5.0 Vdc) Q2 − 7.6 − Q3 − 8.4 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage V Vdc (I SD S = 15 Adc, VGS = 0 Vdc) − 2.5 3.0 (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) − 1.9 − Reverse Recovery Time trr − 64 − ns t (I a − 50 − S = 15 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) tb − 14 − Reverse Recovery Stored Charge QRR − 0.177 − mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD − 4.5 − nH (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com 2
MTD20P06HDL ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 mAdc) 60 − − Temperature Coefficient (Positive) − 81.3 − mV/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 60 Vdc, VGS = 0 Vdc) − − 1.0 (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 10 Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 250 mAdc) 1.0 1.7 2.0 Temperature Coefficient (Negative) − 3.9 − mV/°C Static Drain−Source On−Resistance RDS(on) − 143 175 mW (VGS = 5.0 Vdc, ID = 7.5 Adc) Drain−Source On−Voltage (VGS = 5.0 Vdc) VDS(on) Vdc (ID = 15 Adc) − 2.3 3.0 (ID = 7.5 Adc, TJ = 125°C) − 1.6 2.0 Forward Transconductance (VDS = 10 Vdc, ID = 7.5 Adc) gFS 9.0 11 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 850 1190 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 210 290 Reverse Transfer Capacitance Crss − 66 130
SWITCHING CHARACTERISTICS
(Note 4) Turn−On Delay Time td(on) − 19 38 ns Rise Time t (V r − 175 350 DS = 30 Vdc, ID = 15 Adc, V Turn−Off Delay Time GS = 5.0 Vdc,RG = 9.1 W) td(off) − 41 82 Fall Time tf − 68 136 Gate Charge QT − 20.6 29 nC Q (V 1 − 3.7 − DS = 48 Vdc, ID = 15 Adc, VGS = 5.0 Vdc) Q2 − 7.6 − Q3 − 8.4 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage V Vdc (I SD S = 15 Adc, VGS = 0 Vdc) − 2.5 3.0 (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) − 1.9 − Reverse Recovery Time trr − 64 − ns t (I a − 50 − S = 15 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) tb − 14 − Reverse Recovery Stored Charge QRR − 0.177 − mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD − 4.5 − nH (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com 2