Datasheet 2N5210/MMBT5210 (ON Semiconductor) - 6

HerstellerON Semiconductor
BeschreibungNPN General Purpose Amplifier
Seiten / Seite9 / 6 — (continued) Typical Characteristics (continued) Contours of Constant
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(continued) Typical Characteristics (continued) Contours of Constant

(continued) Typical Characteristics (continued) Contours of Constant

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(continued) Typical Characteristics (continued) Contours of Constant
Narrow Band Noise Figure 10,000 R S -SOURCE RESISTANCE ( Ω ) R S -SOURCE RESISTANCE ( Ω ) Contours of Constant
Narrow Band Noise Figure
3.0 dB
5,000 4.0 dB
2,000 6.0 dB 1,000 8.0 dB 500 V CE = 5.0 V 200 f = 100 Hz
BANDWIDTH
= 20 Hz 10 dB
12 dB
14 dB 100 1 10,000
5,000 2.0 dB
2,000 3.0 dB
1,000 4.0 dB
500
V CE = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz 200 1 1,000 10000
1.0 dB
2.0 dB
3.0 dB 1000 4.0 dB 500 V CE = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz 200
100 1 6.0 dB 10
100
I C -COLLECTOR CURRENT ( µ A) 10
100
I C-COLLECTOR CURRENT ( µ A) 1,000 Contours of Constant
Narrow Band Noise Figure 8.0 dB 1000 R S -SOURCE RESISTANCE (Ω ) R S -SOURCE RESISTANCE (Ω ) Contours of Constant
Narrow Band Noise Figure 2000 8.0 dB 100 10
100
I C -COLLECTOR CURRENT ( µ A) 5000 6.0 dB 10000
5000
2000
1000 2.0 dB 3.0 dB VCE =
4.0 dB
5.0V
f = 1.0 MHz
200 BANDWIDTH
7.0 dB
= 200kHz
8.0 dB
100
0.01
0.1
1
I C -COLLECTOR CURRENT ( µ A)
500 5.0
dB
6.0
dB 10 2N5210/MMBT5210 NPN General Purpose Amplifier