Datasheet IRL3705N (International Rectifier) - 7
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 8 / 7 — Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14 |
| Dateiformat / Größe | PDF / 109 Kb |
| Dokumentensprache | Englisch |
Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRL3705N
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T
• Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • Driver same type as D.U.T. V - DD • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test Driver Gate Drive P.W. Period D = P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 14.
For N-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T
• Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • Driver same type as D.U.T. V - DD • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test Driver Gate Drive P.W. Period D = P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 14.
For N-Channel HEXFETS