Datasheet IRL3705N (International Rectifier) - 4
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 8 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Dateiformat / Größe | PDF / 109 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig 7. Fig 8
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Textversion des Dokuments
IRL3705N 6000 15 V G S = 0V , f = 1 M H z I = D 4 6A C is = s C + gs C , gd C ds S H O R TE D ) V = 4 4V DS C rs = s C g d V V = 2 8V 5000 DS C is s C ( o = s s C + ds C gd e 12 g ) F lta p o 4000 V e ( e 9 rc u itanc o 3000 C o s s -S pac a -to 6 te , C 2000 a C , G C rs s GS 3 1000 V FO R TES T C IR CU I T SEE FIG U R E 13 0 A 0 A 1 10 100 0 20 40 60 80 100 120 140 V D S , D rain-to -S ou rce Volta ge (V ) Q , To tal Ga te Ch arg e (nC ) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 0 1000 OPE R ATIO N IN TH IS A RE A LI MI TE D ) BY R D S(o n) (A t n rre ) 10µ s u C t (A 100 in ra rren u 100µ s D 1 0 0 e n C rs e T = 1 75°C J rai v e 1 ms T = 2 5°C D J 10 D , R I , I SD 10m s T = 25 °C C T = 17 5°C J V G S = 0 V S ing le Pulse 1 0 A 1 A 0 . 4 0 . 8 1 . 2 1 . 6 2 . 0 2 . 4 2 . 8 1 10 100 V , S o urce-to -Drain Vo lta ge (V ) V , Dra in -to-So urce Vo ltag e (V) S D D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 0 1000 OPE R ATIO N IN TH IS A RE A LI MI TE D ) BY R D S(o n) (A t n rre ) 10µ s u C t (A 100 in ra rren u 100µ s D 1 0 0 e n C rs e T = 1 75°C J rai v e 1 ms T = 2 5°C D J 10 D , R I , I SD 10m s T = 25 °C C T = 17 5°C J V G S = 0 V S ing le Pulse 1 0 A 1 A 0 . 4 0 . 8 1 . 2 1 . 6 2 . 0 2 . 4 2 . 8 1 10 100 V , S o urce-to -Drain Vo lta ge (V ) V , Dra in -to-So urce Vo ltag e (V) S D D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage