SUP90P06-09L Vishay Siliconix THERMAL RATINGS 200 1000 Limited by R * DS(on) 10 µs 150 100 A( A t ( n t 100 µs e n r e r r u r u C 100 C 10 n i n a i r ar 1 ms D D -) -) 10 ms I D Limited 100 ms, DC by Package I D 50 1 T C = 25 °C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS TC - Case Temperature (°C) * V > minimum V at which R is specified GS GS DS(on) Maximum Avalanche and Drain CurrentSafe Operating Areavs. Case Temperature 2 1 Duty Cycle = 0.5 t n e i s 0.2 n e a c r n Notes: T a e d v e i t p P c m 0.1 DM e I f f l a 0.1 E 0.05 t d m r 1 e e 0.02 t z 2 i t l h 1 a T 1. Duty Cycle, D = Single Pulse t 2 m r 2. Per Unit Base = R thJA = 62.5 °C/W o N 3. T (t) JM - T A = P DM Z thJA 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73010. Document Number: 73010 www.vishay.com S10-2545-Rev. B, 08-Nov-10 5