Datasheet BSS138 (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Seiten / Seite | 5 / 3 — B SS138. Typical Characteristics. ANCE. NT (. N-RE. RMALI. N CURRE. , NO. … |
| Revision | 3 |
| Dateiformat / Größe | PDF / 188 Kb |
| Dokumentensprache | Englisch |
B SS138. Typical Characteristics. ANCE. NT (. N-RE. RMALI. N CURRE. , NO. URCE. , DRAI. I D. N-S. DRAI. D, DRAIN CURRENT (A)
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Textversion des Dokuments
B SS138 Typical Characteristics
1 3.4 VGS = 10V 6.0V 4.5V 3.5V 3 0.8 3.0V V
ANCE
GS = 2.5V
A) D T
2.6
E IS Z NT ( S
0.6 2.2
N-RE RMALI O
3.0V 2.5V
N CURRE
1.8
, NO
3.5V 0.4
N) URCE
4.0V
(O O
4.5V
DS , DRAI
1.4
R I D N-S
6.0V 0.2 2.0V 1 10V
DRAI
0.6 0 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 3
I V D, DRAIN CURRENT (A) DS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
2 4.1
E
I = 220mA I = 110mA D D 1.8 V = 10V GS 3.5
HM) TANC D IS
1.6
(O S
2.9
RE ANCE
T = 125oC
N-
1.4
T
A
RMALIZE O IS
2.3
S
1.2
, NO -RE N) URCE N (O O
1.7
DS S
1
, O R N)
T = 25oC A
(O
0.8
DS
1.1
R DRAIN-
0.6 0.5 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
T V J, JUNCTION TEMPERATURE (oC) GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage.
0.6 1 V = 10V V = 0V GS DS T = -55oC A 25oC 0.5
NT (A)
125oC 0.1 T = 125oC 0.4 A
NT (A) N CURRE
25oC 0.3 0.01
N CURRE DRAI
-55oC 0.2
SE , DRAI
0.001
I D EVER
0.1
, R I S
0 0.0001 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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1 3.4 VGS = 10V 6.0V 4.5V 3.5V 3 0.8 3.0V V
ANCE
GS = 2.5V
A) D T
2.6
E IS Z NT ( S
0.6 2.2
N-RE RMALI O
3.0V 2.5V
N CURRE
1.8
, NO
3.5V 0.4
N) URCE
4.0V
(O O
4.5V
DS , DRAI
1.4
R I D N-S
6.0V 0.2 2.0V 1 10V
DRAI
0.6 0 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 3
I V D, DRAIN CURRENT (A) DS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
2 4.1
E
I = 220mA I = 110mA D D 1.8 V = 10V GS 3.5
HM) TANC D IS
1.6
(O S
2.9
RE ANCE
T = 125oC
N-
1.4
T
A
RMALIZE O IS
2.3
S
1.2
, NO -RE N) URCE N (O O
1.7
DS S
1
, O R N)
T = 25oC A
(O
0.8
DS
1.1
R DRAIN-
0.6 0.5 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
T V J, JUNCTION TEMPERATURE (oC) GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage.
0.6 1 V = 10V V = 0V GS DS T = -55oC A 25oC 0.5
NT (A)
125oC 0.1 T = 125oC 0.4 A
NT (A) N CURRE
25oC 0.3 0.01
N CURRE DRAI
-55oC 0.2
SE , DRAI
0.001
I D EVER
0.1
, R I S
0 0.0001 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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