Datasheet 2N7000, 2N7002, NDS7002A (ON Semiconductor)

2N7000 / 2N7002 / NDS7002A — N-Chan 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features Description
• High Density Cell Design for Low R These N-channel enhancement mode field effect transis- DS(ON) tors are produced using ON Semiconductor's • Voltage Controlled Small Signal Switch proprietary, high cell density, DMOS technology. These • Rugged and Reliable products have been designed to minimize on-state • High Saturation Current Capability resistance while providing rugged, reliable, and fast switching performance. They can be used in most
nel Enh
applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control,
a
power MOSFET gate drivers, and other switching appli-
ncement Mode Field Effect T
cations.
D D S G G
TO-92 1
SOT
-
23
1. Source 2. Gate 3. Drain (TO-236AB)
S
2N7002/NDS7002A
ransisto Ordering Information r Min Order Qty / Part Number Marking Package Packing Method Immediate Pack Qty
2N7000 2N7000 TO-92 3L Bulk 10000 / 1000 2N7000-D74Z 2N7000 TO-92 3L Ammo 2000 / 2000 2N7000-D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7000-D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000 NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000 © 1998 Semiconductor Components Industries, LLC. Publication Order Number: NDS7002A/D October-2017, Rev. 3