Datasheet FDD4141 (ON Semiconductor) - 2

FDD4141
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features General Description „ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications. „ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant Applications
„ Inverter
„ Power Supplies S D G G
S D
-PA
K
TO
-2 52
(TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD
TJ, TSTG Units
V ±20 V -50
-58
(Note 1a) -Pulsed -10.8 A -100 Single Pulse Avalanche Energy EAS Ratings
-40 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 337
69 (Note 1a) Operating and Storage Junction Temperature Range 2.4
-55 to +150 mJ
W
°C Thermal Characteristics
RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8
(Note 1a) 52 °C/W Package Marking and Ordering Information
Device Marking
FDD4141
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2 Device
FDD4141 Package
D-PAK (TO-252)
1 Reel Size
13’’ Tape Width
16mm Quantity
2500 units
www.fairchildsemi.com FDD4141 P-Channel PowerTrench® MOSFET April 2015