Datasheet LT1113 (Analog Devices) - 8
| Hersteller | Analog Devices |
| Beschreibung | Dual Low Noise, Precision, JFET Input Op Amps |
| Seiten / Seite | 18 / 8 — Typical perForMance characTerisTics. Output Voltage Swing vs. Slew Rate … |
| Dateiformat / Größe | PDF / 721 Kb |
| Dokumentensprache | Englisch |
Typical perForMance characTerisTics. Output Voltage Swing vs. Slew Rate and Gain Bandwidth. Load Current
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LT1113
Typical perForMance characTerisTics Output Voltage Swing vs Slew Rate and Gain Bandwidth Load Current Capacitive Load Handling Product vs Temperature
GAIN BANDWIDTH PRODUCT (f V+ –0.8 50 6 12 –1.0 25°C 125°C VS = ±15V TA = 25°C 5 10 –1.2 –55°C 40 RL ≥ 10k V –1.4 O = 100mVP-P AV = +10, RF = 10k, CF = 20pF 4 SLEW RATE 8 –1.6 30 VS = ±5V TO ±20V 1.4 3 6 1.2 20 GBW O OVERSHOOT (%) 2 4 = 100kHz)(MHz) 1.0 SLEW RATE (V/µs) AV = 1 OUTPUT VOLTAGE SWING (V) 0.8 –55°C 10 1 2 0.6 25°C A 125°C V = 10 V– +0.4 0 0 0 –10 –8 –6 –4 –2 0 2 4 6 8 10 0.1 1 10 100 1000 10000 –75 –50 –25 0 25 50 75 100 125 ISINK OUTPUT CURRENT (mA) ISOURCE CAPACITIVE LOAD (pF) TEMPERATURE (°C) 1113 G16 1113 G17 1113 G18
Distribution of Offset Voltage Drift Distribution of Offset Voltage Drift with Temperature (J8) with Temperature (N8, S8) Warm-Up Drift
40 40 500 VS = ±15V VS = ±15V VS = ±15V T 75 J8 78 S8 A = 25°C S8 PACKAGE 400 30 150 OP AMPS 30 100 N8 356 OP AMPS N8 PACKAGE 300 20 20 200 J8 PACKAGE PERCENT OF UNITS PERCENT OF UNITS 10 10 100 CHANGE IN OFFSET VOLTAGE (µV) IN STILL AIR (S8 PACKAGE SOLDERED ONTO BOARD) 0 0 0 –12 –10 –8 –6 –4 –2 0 2 4 6 8 –25 –20 –15 –10 –5 0 5 10 15 20 25 0 1 2 3 4 5 6 TIME AFTER POWER ON (MINUTES) OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C) OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C) 1113 G21 1113 G20 1113 G19
THD and Noise vs Frequency for THD and Noise vs Frequency for Noninverting Gain Inverting Gain Channel Separation vs Frequency
1 1 160 Z LIMITED BY L = 2k||15pF ZL = 2k||15pF V THERMAL INTERACTION O = 20VP-P VO = 20VP-P 140 AV = +1, +10, +100 AV = –1, –10, –100 0.1 MEASUREMENT BANDWIDTH 0.1 MEASUREMENT BANDWIDTH 120 = 10Hz TO 80kHz = 10Hz TO 80kHz A 100 V = 100 AV = –100 0.01 0.01 80 AV = –10 60 A LIMITED BY 0.001 V = 10 A V V = 1 0.001 40 S = ±15V A PIN-TO-PIN V = –1 CHANNEL SEPARATION (dB) RL = 1k V CAPACITANCE NOISE FLOOR O = 10VP-P NOISE FLOOR 20 TA = 25°C TOTAL HARMONIC DISTORTION + NOISE (%) TOTAL HARMONIC DISTORTION + NOISE (%) 0.0001 0.0001 0 20 100 1k 10k 20k 20 100 1k 10k 20k 10 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) FREQUENCY (Hz) 1113 • G22 1113 G23 1113 G24 *See LT1115 data sheet for definition of CCIF testing. 1113fc 8 For more information www.linear.com/LT1113
Typical perForMance characTerisTics Output Voltage Swing vs Slew Rate and Gain Bandwidth Load Current Capacitive Load Handling Product vs Temperature
GAIN BANDWIDTH PRODUCT (f V+ –0.8 50 6 12 –1.0 25°C 125°C VS = ±15V TA = 25°C 5 10 –1.2 –55°C 40 RL ≥ 10k V –1.4 O = 100mVP-P AV = +10, RF = 10k, CF = 20pF 4 SLEW RATE 8 –1.6 30 VS = ±5V TO ±20V 1.4 3 6 1.2 20 GBW O OVERSHOOT (%) 2 4 = 100kHz)(MHz) 1.0 SLEW RATE (V/µs) AV = 1 OUTPUT VOLTAGE SWING (V) 0.8 –55°C 10 1 2 0.6 25°C A 125°C V = 10 V– +0.4 0 0 0 –10 –8 –6 –4 –2 0 2 4 6 8 10 0.1 1 10 100 1000 10000 –75 –50 –25 0 25 50 75 100 125 ISINK OUTPUT CURRENT (mA) ISOURCE CAPACITIVE LOAD (pF) TEMPERATURE (°C) 1113 G16 1113 G17 1113 G18
Distribution of Offset Voltage Drift Distribution of Offset Voltage Drift with Temperature (J8) with Temperature (N8, S8) Warm-Up Drift
40 40 500 VS = ±15V VS = ±15V VS = ±15V T 75 J8 78 S8 A = 25°C S8 PACKAGE 400 30 150 OP AMPS 30 100 N8 356 OP AMPS N8 PACKAGE 300 20 20 200 J8 PACKAGE PERCENT OF UNITS PERCENT OF UNITS 10 10 100 CHANGE IN OFFSET VOLTAGE (µV) IN STILL AIR (S8 PACKAGE SOLDERED ONTO BOARD) 0 0 0 –12 –10 –8 –6 –4 –2 0 2 4 6 8 –25 –20 –15 –10 –5 0 5 10 15 20 25 0 1 2 3 4 5 6 TIME AFTER POWER ON (MINUTES) OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C) OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C) 1113 G21 1113 G20 1113 G19
THD and Noise vs Frequency for THD and Noise vs Frequency for Noninverting Gain Inverting Gain Channel Separation vs Frequency
1 1 160 Z LIMITED BY L = 2k||15pF ZL = 2k||15pF V THERMAL INTERACTION O = 20VP-P VO = 20VP-P 140 AV = +1, +10, +100 AV = –1, –10, –100 0.1 MEASUREMENT BANDWIDTH 0.1 MEASUREMENT BANDWIDTH 120 = 10Hz TO 80kHz = 10Hz TO 80kHz A 100 V = 100 AV = –100 0.01 0.01 80 AV = –10 60 A LIMITED BY 0.001 V = 10 A V V = 1 0.001 40 S = ±15V A PIN-TO-PIN V = –1 CHANNEL SEPARATION (dB) RL = 1k V CAPACITANCE NOISE FLOOR O = 10VP-P NOISE FLOOR 20 TA = 25°C TOTAL HARMONIC DISTORTION + NOISE (%) TOTAL HARMONIC DISTORTION + NOISE (%) 0.0001 0.0001 0 20 100 1k 10k 20k 20 100 1k 10k 20k 10 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) FREQUENCY (Hz) 1113 • G22 1113 G23 1113 G24 *See LT1115 data sheet for definition of CCIF testing. 1113fc 8 For more information www.linear.com/LT1113