Datasheet LT1218, LT1219 (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | Precision Rail-to-Rail Input and Output Op Amps |
| Seiten / Seite | 16 / 3 — ELECTRICAL CHARACTERISTICS TA = 25 |
| Dateiformat / Größe | PDF / 329 Kb |
| Dokumentensprache | Englisch |
ELECTRICAL CHARACTERISTICS TA = 25
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Textversion des Dokuments
LT1218/LT1219
ELECTRICAL CHARACTERISTICS TA = 25
°
C, VS = 5V, 0V; VS = 3V, 0V; VCM = VO = half supply, VSHDN = V+, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
SR Slew Rate (LT1218/LT1218L) AV = – 1 0.10 V/µs (LT1219/LT1219L) AV = – 1 0.05 V/µs GBW Gain Bandwidth Product (LT1218/LT1218L) AV = 1000 0.30 MHz (LT1219/LT1219L) AV = 1000 0.15 MHz
0
°
C
≤
TA
≤
70
°
C, VS = 5V, 0V; VS = 3V, 0V; VCM = VO = half supply, VSHDN = V +, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V+ ● 75 200 µV VCM = V– ● 75 200 µV VOS TC Input Offset Drift (Note 2) ● 1 3 µV/°C ∆VOS Input Offset Voltage Shift VCM = V– to V+ ● 25 80 µV IB Input Bias Current VCM = V+ ● 30 75 nA VCM = V– ● – 75 – 18 nA ∆IB Input Bias Current Shift VCM = V– to V+ ● 50 150 nA IOS Input Offset Current VCM = V+ ● 5 25 nA VCM = V– ● 3 25 nA ∆IOS Input Offset Current Shift VCM = V– to V+ ● 5 25 nA AVOL Large-Signal Voltage Gain VS = 5V, VO = 50mV to 4.8V, RL = 10k ● 250 1000 V/mV VS = 3V, VO = 50mV to 2.8V, RL = 10k ● 150 750 V/mV CMRR Common Mode Rejection Ratio VS = 5V, VCM = V – to V+ ● 96 104 dB VS = 3V, VCM = V – to V+ ● 91 106 dB PSRR Power Supply Rejection Ratio VS = 2.3V to 12V, VCM = 0V, VO = 0.5V ● 88 100 dB VOL Output Voltage Swing LOW No Load ● 4 14 mV ISINK = 0.5mA ● 45 100 mV ISINK = 2.5mA ● 130 290 mV VOH Output Voltage Swing HIGH No Load ● V+ – 0.014 V+ – 0.004 V ISOURCE = 0.5mA ● V+ – 0.150 V+ – 0.075 V ISOURCE = 2.5mA ● V+ – 0.480 V+ – 0.240 V ISC Short-Circuit Current VS = 5V ● 4 7 mA VS = 3V ● 3 6 mA IS Supply Current VS = 5V ● 370 485 µA VS = 3V ● 370 475 µA Positive Supply Current, SHDN VS = 5V, VSHDN = 0V ● 9 36 µA VS = 3V, VSHDN = 0V ● 6 26 µA
– 40
°
C
≤
TA
≤
85
°
C, VS = 5V, 0V; VS = 3V, 0V; VCM = VO = half supply, VSHDN = V+, unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V + – 0.15 ● 400 µV VCM = V – + 0.15 ● 400 µV VOS TC Input Offset Drift (Note 2) ● 1 4 µV/°C ∆VOS Input Offset Voltage Shift VCM = V+ – 0.15 to V– + 0.15 ● 30 105 µV IB Input Bias Current VCM = V+ – 0.15 ● 80 nA VCM = V– + 0.15 ● – 80 nA ∆IB Input Bias Current Shift VCM = V+ – 0.15 to V– + 0.15 ● 160 nA IOS Input Offset Current VCM = V+ – 0.15 ● 40 nA VCM = V– + 0.15 ● 40 nA ∆IOS Input Offset Current Shift VCM = V+ – 0.15 to V– + 0.15 ● 40 nA 3
ELECTRICAL CHARACTERISTICS TA = 25
°
C, VS = 5V, 0V; VS = 3V, 0V; VCM = VO = half supply, VSHDN = V+, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
SR Slew Rate (LT1218/LT1218L) AV = – 1 0.10 V/µs (LT1219/LT1219L) AV = – 1 0.05 V/µs GBW Gain Bandwidth Product (LT1218/LT1218L) AV = 1000 0.30 MHz (LT1219/LT1219L) AV = 1000 0.15 MHz
0
°
C
≤
TA
≤
70
°
C, VS = 5V, 0V; VS = 3V, 0V; VCM = VO = half supply, VSHDN = V +, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V+ ● 75 200 µV VCM = V– ● 75 200 µV VOS TC Input Offset Drift (Note 2) ● 1 3 µV/°C ∆VOS Input Offset Voltage Shift VCM = V– to V+ ● 25 80 µV IB Input Bias Current VCM = V+ ● 30 75 nA VCM = V– ● – 75 – 18 nA ∆IB Input Bias Current Shift VCM = V– to V+ ● 50 150 nA IOS Input Offset Current VCM = V+ ● 5 25 nA VCM = V– ● 3 25 nA ∆IOS Input Offset Current Shift VCM = V– to V+ ● 5 25 nA AVOL Large-Signal Voltage Gain VS = 5V, VO = 50mV to 4.8V, RL = 10k ● 250 1000 V/mV VS = 3V, VO = 50mV to 2.8V, RL = 10k ● 150 750 V/mV CMRR Common Mode Rejection Ratio VS = 5V, VCM = V – to V+ ● 96 104 dB VS = 3V, VCM = V – to V+ ● 91 106 dB PSRR Power Supply Rejection Ratio VS = 2.3V to 12V, VCM = 0V, VO = 0.5V ● 88 100 dB VOL Output Voltage Swing LOW No Load ● 4 14 mV ISINK = 0.5mA ● 45 100 mV ISINK = 2.5mA ● 130 290 mV VOH Output Voltage Swing HIGH No Load ● V+ – 0.014 V+ – 0.004 V ISOURCE = 0.5mA ● V+ – 0.150 V+ – 0.075 V ISOURCE = 2.5mA ● V+ – 0.480 V+ – 0.240 V ISC Short-Circuit Current VS = 5V ● 4 7 mA VS = 3V ● 3 6 mA IS Supply Current VS = 5V ● 370 485 µA VS = 3V ● 370 475 µA Positive Supply Current, SHDN VS = 5V, VSHDN = 0V ● 9 36 µA VS = 3V, VSHDN = 0V ● 6 26 µA
– 40
°
C
≤
TA
≤
85
°
C, VS = 5V, 0V; VS = 3V, 0V; VCM = VO = half supply, VSHDN = V+, unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V + – 0.15 ● 400 µV VCM = V – + 0.15 ● 400 µV VOS TC Input Offset Drift (Note 2) ● 1 4 µV/°C ∆VOS Input Offset Voltage Shift VCM = V+ – 0.15 to V– + 0.15 ● 30 105 µV IB Input Bias Current VCM = V+ – 0.15 ● 80 nA VCM = V– + 0.15 ● – 80 nA ∆IB Input Bias Current Shift VCM = V+ – 0.15 to V– + 0.15 ● 160 nA IOS Input Offset Current VCM = V+ – 0.15 ● 40 nA VCM = V– + 0.15 ● 40 nA ∆IOS Input Offset Current Shift VCM = V+ – 0.15 to V– + 0.15 ● 40 nA 3