Datasheet RH27C (Analog Devices) - 2

RH27
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage RH27AE 11 35 4 60 2, 3 μV RH27E 1 55 4 100 2, 3 μV RH27C 1 100 4 300 2, 3 μV ΔVOS Average Offset Drift RH27E 4, 7 1 μV/°C ΔTemp RH27C 4, 7 1.8 μV/°C ΔVOS Long-Term Input RH27E 2, 4 1 μV/ ΔTime Offset Voltage Stability RH27C 2, 4 2 Month IOS Input Offset Current RH27E 35 1 50 2, 3 nA RH27C 75 1 135 2, 3 nA IB Input Bias Current RH27E ±40 1 ±60 2, 3 nA RH27C ±80 1 ±150 2, 3 nA en Input Noise Voltage 0.1Hz to 10Hz (RH27E) 4, 5 0.18 μVP-P 0.1Hz to 10Hz (RH27C) 4, 5 0.25 μVP-P Input Noise Voltage fO = 10Hz (RH27E) 3 5.5 nV/√Hz Density fO = 30Hz (RH27E) 4 4.5 nV/√Hz fO = 1000Hz (RH27E) 4 3.8 nV/√Hz fO = 10Hz (RH27C) 3 8 nV/√Hz fO = 30Hz (RH27C) 4 5.6 nV/√Hz fO = 1000Hz (RH27C) 4 4.5 nV/√Hz in Input Noise Current fO = 1000Hz 4, 6 0.6 pA/√Hz Density Input Resistance RH27E 3 GΩ Common Mode RH27C 2 GΩ Input Voltage Range RH27E 4 ±11 ±10.3 V RH27C 4 ±11 ±10.2 V CMRR Common Mode VCM = ±11V (RH27E) 114 1 dB Rejection Ratio VCM = ±10V (RH27E) 108 2, 3 dB VCM = ±11V (RH27C) 100 1 dB VCM = ±10V (RH27C) 94 2, 3 dB PSRR Power Supply VS = ±4V to ±18V (RH27E) 100 1 dB Rejection Ratio VS = ±4.5V to ±18V (RH27E) 96 2, 3 dB VS = ±4V to ±18V (RH27C) 94 1 dB VS = ±4.5V to ±18V (RH27C) 86 2, 3 dB AVOL Large-Signal Voltage RL ≥ 2kΩ, VO = ±10V (RH27E) 1000 4 600 5, 6 V/mV Gain RL ≥ 600Ω, VO = ±1V (RH27E) 4 250 V/mV VS = ±4V R 700 4 300 5, 6 V/mV L ≥ 2kΩ, VO = ±10V (RH27C) R 4 200 V/mV L ≥ 600Ω, VO = ±1V (RH27C) VS = ±4V VOUT Maximum Output RL ≥ 2kΩ (RH27E) ±12 4 ±11.5 5, 6 V Voltage Swing RL ≥ 600Ω (RH27E) ±10 4 V RL ≥ 2kΩ (RH27C) ±11.5 4 ±10.5 5, 6 V RL ≥ 600Ω (RH27C) ±10 4 V SR Slew Rate RL ≥ 2kΩ 1.7 7 V/μs GBW Gain-Bandwidth fO = 100kHz 4 5 MHz Product ZO Open-Loop Output VO = 0, IO = 0 70 Ω Resistance PD Power Dissipation RH27E 140 1 mW RH27C 170 1 mW rh27fd 2