Datasheet LT1189 (Analog Devices) - 2
| Hersteller | Analog Devices |
| Beschreibung | Low Power Video Difference Amplifier |
| Seiten / Seite | 12 / 2 — ABSOLUTE. AXI U. R TI GS. PACKAGE/ORDER I FOR ATIO. –5V. ELECTRICAL CHAR … |
| Dateiformat / Größe | PDF / 318 Kb |
| Dokumentensprache | Englisch |
ABSOLUTE. AXI U. R TI GS. PACKAGE/ORDER I FOR ATIO. –5V. ELECTRICAL CHAR C. A TERISTICS TA = 25. C, (Note 3). VS =
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LT1189
W W W U U W U ABSOLUTE AXI U A R TI GS PACKAGE/ORDER I FOR ATIO
Total Supply Voltage (V + to V –) ... 18V TOP VIEW ORDER PART Differential Input Voltage .. ±6V +/REF 1 8 –/FB NUMBER Input Voltage .. ±VS –IN 2 7 + V Output Short Circuit Duration (Note 1) .. Continuous +IN 3 6 OUT LT1189MJ8 Operating Temperature Range V – 4 5 S/D LT1189CJ8 LT1189M ... – 55°C to 150°C LT1189CN8 J8 PACKAGE N8 PACKAGE LT1189C... 0°C to 70°C 8-LEAD HERMETIC DIP 8-LEAD PLASTIC DIP LT1189CS8 Junction Temperature (Note 2) S8 PACKAGE Plastic Package (CN8,CS8) ... 150°C 8-LEAD PLASTIC SOIC LT1189 • POI01 S8 PART MARKING Ceramic Package (CJ8,MJ8) ... 175°C TJMAX = 175°C, θJA = 100°C/W (J8) Storage Temperature Range .. – 65°C to 150°C TJMAX = 150°C, θJA = 100°C/W (N8) T 1189 JMAX = 150°C, θJA = 150°C/ W (S8) Lead Temperature (Soldering, 10 sec.).. 300°C
–5V + ELECTRICAL CHAR C A TERISTICS TA = 25
°
C, (Note 3) VS =
±
5V, VREF = 0V, RFB1 = 900
Ω
from pins 6 to 8, RFB2 = 100
Ω
from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL
≤
10pF, pin 5 open. LT1189M/C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage Either Input, (Note 4) 1.0 3.0 mV SOIC Package 1.0 4.0 mV IOS Input Offset Current Either Input 0.2 1.0 µA IB Input Bias Current Either Input ±0.5 ±2.0 µA en Input Noise Voltage fO = 10kHz 30 nV/√Hz in Input Noise Current fO = 10kHz 1.25 pA/√Hz RIN Input Resistance Differential 30 kΩ CIN Input Capacitance Either Input 2.0 pF VIN LIM Input Voltage Limit (Note 5) ±170 mV Input Voltage Range –2.5 3.5 V CMRR Common-Mode Rejection Ratio VCM = –2.5V to 3.5V 80 105 dB PSRR Power Supply Rejection Ratio VS = ± 2.375V to ±8V 75 90 dB VOUT Output Voltage Swing VS = ± 5V, RL = 1k, AV = 50 ±3.8 ±4.0 V VS = ± 8V, RL = 1k, AV = 50 ±6.7 ±7.0 VS = ±8V, RL = 300Ω, AV = 50, (Note 3) ±6.4 ±6.8 GE Gain Error VO = ±1.0V, AV = 10 1.0 3.5 % SR Slew Rate (Note 6, 10) 150 220 V/µs FPBW Full Power Bandwidth VO = 2VP-P, (Note 7) 35 MHz BW Small Signal Bandwidth AV = 10 35 MHz tr, tf Rise Time, Fall Time AV = 50, VO = ±1.5V, 20% to 80% (Note 10) 35 50 75 ns tPD Propagation Delay RL= 1k, VO = ±125mV, 50% to 50% 12 ns Overshoot VO = ± 50mV 10 % ts Settling Time 3V Step, 0.1%, (Note 8) 1 µs Diff AV Differential Gain RL = 1k, AV = 10, (Note 9) 0.6 % Diff Ph Differential Phase RL = 1k, AV = 10, (Note 9) 0.75 DEGP-P IS Supply Current 13 16 mA Shutdown Supply Current Pin 5 at V – 0.8 1.5 mA 2
W W W U U W U ABSOLUTE AXI U A R TI GS PACKAGE/ORDER I FOR ATIO
Total Supply Voltage (V + to V –) ... 18V TOP VIEW ORDER PART Differential Input Voltage .. ±6V +/REF 1 8 –/FB NUMBER Input Voltage .. ±VS –IN 2 7 + V Output Short Circuit Duration (Note 1) .. Continuous +IN 3 6 OUT LT1189MJ8 Operating Temperature Range V – 4 5 S/D LT1189CJ8 LT1189M ... – 55°C to 150°C LT1189CN8 J8 PACKAGE N8 PACKAGE LT1189C... 0°C to 70°C 8-LEAD HERMETIC DIP 8-LEAD PLASTIC DIP LT1189CS8 Junction Temperature (Note 2) S8 PACKAGE Plastic Package (CN8,CS8) ... 150°C 8-LEAD PLASTIC SOIC LT1189 • POI01 S8 PART MARKING Ceramic Package (CJ8,MJ8) ... 175°C TJMAX = 175°C, θJA = 100°C/W (J8) Storage Temperature Range .. – 65°C to 150°C TJMAX = 150°C, θJA = 100°C/W (N8) T 1189 JMAX = 150°C, θJA = 150°C/ W (S8) Lead Temperature (Soldering, 10 sec.).. 300°C
–5V + ELECTRICAL CHAR C A TERISTICS TA = 25
°
C, (Note 3) VS =
±
5V, VREF = 0V, RFB1 = 900
Ω
from pins 6 to 8, RFB2 = 100
Ω
from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL
≤
10pF, pin 5 open. LT1189M/C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage Either Input, (Note 4) 1.0 3.0 mV SOIC Package 1.0 4.0 mV IOS Input Offset Current Either Input 0.2 1.0 µA IB Input Bias Current Either Input ±0.5 ±2.0 µA en Input Noise Voltage fO = 10kHz 30 nV/√Hz in Input Noise Current fO = 10kHz 1.25 pA/√Hz RIN Input Resistance Differential 30 kΩ CIN Input Capacitance Either Input 2.0 pF VIN LIM Input Voltage Limit (Note 5) ±170 mV Input Voltage Range –2.5 3.5 V CMRR Common-Mode Rejection Ratio VCM = –2.5V to 3.5V 80 105 dB PSRR Power Supply Rejection Ratio VS = ± 2.375V to ±8V 75 90 dB VOUT Output Voltage Swing VS = ± 5V, RL = 1k, AV = 50 ±3.8 ±4.0 V VS = ± 8V, RL = 1k, AV = 50 ±6.7 ±7.0 VS = ±8V, RL = 300Ω, AV = 50, (Note 3) ±6.4 ±6.8 GE Gain Error VO = ±1.0V, AV = 10 1.0 3.5 % SR Slew Rate (Note 6, 10) 150 220 V/µs FPBW Full Power Bandwidth VO = 2VP-P, (Note 7) 35 MHz BW Small Signal Bandwidth AV = 10 35 MHz tr, tf Rise Time, Fall Time AV = 50, VO = ±1.5V, 20% to 80% (Note 10) 35 50 75 ns tPD Propagation Delay RL= 1k, VO = ±125mV, 50% to 50% 12 ns Overshoot VO = ± 50mV 10 % ts Settling Time 3V Step, 0.1%, (Note 8) 1 µs Diff AV Differential Gain RL = 1k, AV = 10, (Note 9) 0.6 % Diff Ph Differential Phase RL = 1k, AV = 10, (Note 9) 0.75 DEGP-P IS Supply Current 13 16 mA Shutdown Supply Current Pin 5 at V – 0.8 1.5 mA 2