Datasheet ADuM3190S (Analog Devices) - 8
| Hersteller | Analog Devices |
| Beschreibung | Aerospace High Stability Isolated Error Amplifier |
| Seiten / Seite | 14 / 8 — 6.0 MIL-PRF-38535 QMLV Exceptions. 7.0 Application Notes |
| Revision | C |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
6.0 MIL-PRF-38535 QMLV Exceptions. 7.0 Application Notes
Modelllinie für dieses Datenblatt
Textversion des Dokuments
control and shall be made available to the preparing and acquiring activity upon request. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A.
6.0 MIL-PRF-38535 QMLV Exceptions
6.1. Wafer Fabrication Wafer fabrication occurs at MIL-PRF-38535 QML Class Q certified facility. 6.2. Wafer Lot Acceptance (WLA) WLA per MIL-STD-883 TM 5007 is not available for this product. SEM inspection per MIL-STD-883 TM2018 is not applicable to the ADuM3190S. The wafer fabrication process is manufactured using planarized metallization 6.3. Device contains bi-metallic wire bonds (Gold bond wires on Aluminum die pads).
7.0 Application Notes
TEST CIRCUITS
6.0 MIL-PRF-38535 QMLV Exceptions
6.1. Wafer Fabrication Wafer fabrication occurs at MIL-PRF-38535 QML Class Q certified facility. 6.2. Wafer Lot Acceptance (WLA) WLA per MIL-STD-883 TM 5007 is not available for this product. SEM inspection per MIL-STD-883 TM2018 is not applicable to the ADuM3190S. The wafer fabrication process is manufactured using planarized metallization 6.3. Device contains bi-metallic wire bonds (Gold bond wires on Aluminum die pads).
7.0 Application Notes
TEST CIRCUITS