Datasheet LT1101 (Analog Devices) - 4

LT1101
ELECTRICAL CHARACTERISTICS VS =
±
15V, VCM = 0V, TA = 25
°
C, Gain = 10 or 100, unless otherwise noted. LT1101AM/AI LT1101M/I SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
VO Maximum 0utput RL = 50k 13.0 14.2 13.0 14.2 V Voltage Swing RL = 2k 11.0 13.2 11.0 13.2 V BW Bandwidth G = 100 (Note 2) 2.3 3.5 2.3 3.5 kHz G = 10 (Note 2) 25 37 25 37 kHz SR Slew Rate 0.06 0.10 0.06 0.10 V/µs
ELECTRICAL CHARACTERISTICS VS =
±
15V, VCM = 0V, Gain = 10 or 100, –55
°
C
≤
TA
≤
125
°
C for AM/M grades, –40
°
C
≤
TA
≤
85
°
C for AI/I grades, unless otherwise noted. LT1101AM/AI LT1101M/I SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
GE Gain Error G = 100, VO = ±10V, RL = 50k 0.024 0.070 0.026 0.100 % G = 100, VO = ±10V, RL = 5k 0.030 0.100 0.035 0.130 % G = 10, VO = ±10V, RL = 50k or 5k 0.015 0.070 0.018 0.100 % TCGE Gain Error Drift G = 100, RL = 50k 2 4 2 5 ppm/°C (Note 2) G = 100, RL = 5k 2 7 2 8 ppm/°C G = 10, RL = 50k or 5k 1 4 1 5 ppm/°C GNL Gain Nonlinearity G = 100, RL = 50k 24 70 26 90 ppm G = 100, RL = 5k 70 300 75 500 ppm G = 10, RL = 50k 4 13 5 15 ppm G = 10, RL = 5k 10 40 12 60 ppm VOS Input Offset Voltage 90 350 110 500 µV LT1101ISW 110 950 µV ∆VOS/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C LT1101ISW 0.5 4.8 mV/°C lOS Input Offset Current 0.16 0.80 0.19 1.30 nA ∆lOS/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C IB Input Bias Current 7 10 7 12 nA ∆IB/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C CMRR Common Mode G = 100, VCM = –14.4V to 13V 96 111 94 111 dB Rejection Ratio G = 100, VCM = –13V to 11.5V 80 99 78 98 dB PSRR Power Supply VS = 3.0, –0.1V to ±18V 98 110 94 110 dB Rejection Ratio IS Supply Current 105 165 108 190 µA VO Maximum 0utput RL = 50k 12.5 14.0 12.5 14.0 V Voltage Swing RL = 5k 11.0 13.5 11.0 13.5 V 1101fa 4