Datasheet LT1167 (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungSingle Resistor Gain Programmable, Precision Instrumentation Amplifier
Seiten / Seite22 / 4 — ELECTRICAL CHARACTERISTICS. VS = ±15V, VCM = 0V, TA = 25°C, RL = 2k, …
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ELECTRICAL CHARACTERISTICS. VS = ±15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted. LT1167AC/LTC1167AI

ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted LT1167AC/LTC1167AI

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LT1167
ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted. LT1167AC/LTC1167AI LT1167C/LTC1167I LT1167AC-1/LTC1167AI-1 LT1167C-1/LTC1167I-1 SYMBOL PARAMETER CONDITIONS (NOTE 7) MIN TYP MAX MIN TYP MAX UNITS
IOUT Output Current 20 27 20 27 mA BW Bandwidth G = 1 1000 1000 kHz G = 10 800 800 kHz G = 100 120 120 kHz G = 1000 12 12 kHz SR Slew Rate G = 1, VOUT = ±10V 0.75 1.2 0.75 1.2 V/μs Settling Time to 0.01% 10V Step G = 1 to 100 14 14 μs G = 1000 130 130 μs RREFIN Reference Input Resistance 20 20 kΩ IREFIN Reference Input Current VREF = 0V 50 50 μA VREF Reference Voltage Range –VS + 1.6 +VS – 1.6 –VS + 1.6 +VS – 1.6 V AVREF Reference Gain to Output 1 ±0.0001 1 ±0.0001
The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, VCM = 0V, 0°C ≤ TA ≤ 70°C, RL = 2k, unless otherwise noted. LT1167AC/LT1167AC-1 LT1167C/LT1167C-1 SYMBOL PARAMETER CONDITIONS (NOTE 7) MIN TYP MAX MIN TYP MAX UNITS
Gain Error G = 1 l 0.01 0.03 0.012 0.04 % G = 10 (Note 2) l 0.08 0.30 0.100 0.33 % G = 100 (Note 2) l 0.09 0.30 0.120 0.33 % G = 1000 (Note 2) l 0.14 0.33 0.140 0.35 % Gain Nonlinearity VOUT = ±10V, G = 1 l 1.5 10 3 15 ppm VOUT = ±10V, G = 10 and 100 l 3 15 4 20 ppm VOUT = ±10V, G = 1000 l 20 60 25 80 ppm G/T Gain vs Temperature G < 1000 (Note 2) l 20 50 20 50 ppm/°C VOST Total Input Referred VOST = VOSI + VOSO/G Offset Voltage VOSI Input Offset Voltage VS = ±5V to ±15V l 18 60 23 80 μV VOSIH Input Offset Voltage Hysteresis (Notes 3, 6) 3.0 3.0 μV VOSO Output Offset Voltage VS = ±5V to ±15V l 60 380 70 500 μV VOSOH Output Offset Voltage Hysteresis (Notes 3, 6) 30 30 μV VOSI/T Input Offset Drift (Note 8) (Note 3) l 0.05 0.3 0.06 0.4 μV/°C VOSO/T Output Offset Drift (Note 3) l 0.7 3 0.8 4 μV/°C IOS Input Offset Current l 100 400 120 550 pA IOS/T Input Offset Current Drift l 0.3 0.4 pA/°C IB Input Bias Current l 75 450 105 600 pA IB/T Input Bias Current Drift l 0.4 0.4 pA/°C VCM Input Voltage Range G = 1, Other Input Grounded VS = ±2.3V to ±5V l –VS+2.1 +VS–1.3 –VS+2.1 +VS–1.3 V VS = ±5V to ±18V l –VS+2.1 +VS–1.4 –VS+2.1 +VS–1.4 V CMRR Common Mode Rejection Ratio 1k Source Imbalance, VCM = 0V to ±10V G = 1 l 88 92 83 92 dB G = 10 l 100 110 97 110 dB G = 100 l 115 120 113 120 dB G = 1000 l 117 135 114 135 dB 1167fc 4 Document Outline FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION ORDER INFORMATION ELECTRICAL CHARACTERISTICS TYPICAL PERFORMANCE CHARACTERISTICS BLOCK DIAGRAM THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION PACKAGE DESCRIPTION REVISION HISTORY TYPICAL APPLICATION RELATED PARTS