Datasheet LT1789-1, LT1789-10 (Analog Devices) - 7

LT1789-1/LT1789-10
ELECTRICAL CHARACTERISTICS VS = ±15V, RL = 20k, VCM = VOUT = 0V, TA = 25°C, unless otherwise noted. LT1789-1 LT1789-10 SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
BW Bandwidth G = 1 60 kHz G = 10 30 25 kHz G = 100 3 12 kHz G = 1000 0.2 1.5 kHz SR Slew Rate VOUT = ±10V 0.012 0.026 0.028 0.066 V/μs Settling Time to 0.01% 10V Step 460 270 μs RREFIN Reference Input Resistance 220 220 kΩ IREFIN Reference Input Current VREF = 0V 2.7 2.7 μA AVREF Reference Gain to Output 1 ±0.0001 1 ±0.0001
The
l
denotes the specifications which apply over the temperature range of 0°C ≤ TA ≤ 70°C. VS = ±15V, RL = 20k, VCM = VREF = 0V, unless otherwise noted. (Note 4) LT1789-1 LT1789-10 SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Gain Error VO = ±10V G = 1 l 0.15 % G = 10 (Note 2) l 0.38 0.20 % G = 100 (Note 2) l 0.38 0.43 % G = 1000 (Note 2) l 0.43 0.48 % Gain Nonlinearity VO = ±10V G = 1 l 25 ppm G = 10 l 15 45 ppm G = 100 l 25 45 ppm G = 1000 l 120 180 ppm G/T Gain vs Temperature G < 1000 (Notes 2, 3) l 5 50 5 50 ppm/°C VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage G = 1000 l 285 325 µV VOSIH Input Offset Voltage Hysteresis (Notes 3, 5) l 8 30 8 30 µV VOSO Output Offset Voltage G = 1 l 1.2 4 mV VOSOH Output Offset Voltage Hysteresis (Notes 3, 5) l 50 120 400 1000 µV VOSI/T Input Offset Voltage Drift (RTI) (Note 3) l 0.2 0.7 0.3 0.8 µV/°C VOSO/T Output Offset Voltage Drift (Note 3) l 1.5 5 8 22 µV/°C IOS Input Offset Current l 4.5 4.5 nA IOS/T Input Offset Current Drift l 2 2 pA/°C IB Input Bias Current l 45 45 nA IB/T Input Bias Current Drift l 35 35 pA/°C VCM Input Voltage Range G = 1, Other Input Grounded l –14.8 14 –14.8 14 V CMRR Common Mode Rejection Ratio 1k Source Imbalance, VCM = –14.8V to 14V G = 1 l 78 dB G = 10 l 96 91 dB G = 100, 1000 l 100 100 dB 1789fc 7