Datasheet IRF5210SPbF, IRF5210LPbF (Infineon) - 6
| Hersteller | Infineon |
| Seiten / Seite | 10 / 6 — Fig 12a. Fig 13. Fig 12b. Fig 14a. Fig 14b |
| Dateiformat / Größe | PDF / 318 Kb |
| Dokumentensprache | Englisch |
Fig 12a. Fig 13. Fig 12b. Fig 14a. Fig 14b
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRF5210S/LPbF L VDS 500 ) R J I G D.U.T V D DD m 450 ( I TOP -8.7A AS A yg DRIVER -20V r 400 e -14A t 0.01 p Ω n E BOTTOM -23A 350 ehcn 300 alav 250 A 15V esl 200 u P el 150
Fig 12a.
Unclamped Inductive Test Circuit gniS 100 , SA 50 IAS E 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 13.
Maximum Avalanche Energy vs. Drain Current tp V(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V -10V .3µF - Q V GS QGD D.U.T. + DS V V GS G -3mA I I G D Charge Current Sampling Resistors
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit gniS 100 , SA 50 IAS E 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 13.
Maximum Avalanche Energy vs. Drain Current tp V(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V -10V .3µF - Q V GS QGD D.U.T. + DS V V GS G -3mA I I G D Charge Current Sampling Resistors
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit 6 www.irf.com