Datasheet RHK3845MKDICE (Analog Devices) - 9

DICE/DWF SPECIFICATION RH411MKDICE
table 1 Dice/DWF electrical test liMits TA = 25°C (Notes 2, 3, 4) PARAMETER TEST CONDITION MIN MAX UNITS
Drain-to-Source Breakdown Voltage VGS = 0V; ID = 3mA 100 V Static Drain-to-Source On State Resistance VGS = 8V, ID = 0.2A 45 mΩ Gate Threshold Voltage VDS = VGS, ID = 9.8mA 3.95 4.75 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V 1 µA Gate-to-Source Leakage VGS = ±15V, VDS = 0V –20 20 nA Total Gate Charge VGS = 8V, VDS = 30V, ID = 200mA 30 nC Schottky Diode Forward Voltage VGS = 0V, ID = –0.18A 0.6 V
table 2 electrical characteristics (Pre-Irradiation) (Notes 2, 4,5) TA = 25°C SUB- –55°C < TA < 125°C SUB- PARAMETER TEST CONDITION MIN MAX GROUP MIN MAX GROUP UNITS
Drain-to-Source Breakdown Voltage VGS = 0V, ID =3mA 100 1 85 2, 3 V Static Drain-to-Source On State Resistance VGS = 8V, ID = 5A 45 1 95 2, 3 mΩ Gate Threshold Voltage VDS = VGS, ID = 9.8mA 3.95 4.75 1 2.25 5.8 2, 3 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V 1 1 200 2, 3 µA Gate-to-Source Leakage VGS = ±15V, VDS = 0V –20 20 1 –1000 1000 2, 3 nA Total Gate Charge VGS = 8V, VDS = 30V, ID = 200mA 30 1 50 2, 3 nC Schottky Diode Forward Voltage VGS = 0V, ID = –0.2A 0.6 1 0.75 2, 3 V VGS = 0V, ID = –5A 0.75 1 0.85 2, 3 V
table 3 electrical characteristics (Post-Irradiation, TA = 25°C) (Notes 2, 4,5) 50KRad(Si) 100KRad(Si) 150KRad(Si) 200KRad(Si) PARAMETER TEST CONDITION MIN MAX MIN MAX MIN MAX MIN MAX UNITS
Drain-to-Source Breakdown Voltage VGS = 0V; ID = 3mA 80 80 80 80 V Static Drain-to-Source On State VGS = 8V; ID = 5A 50 50 50 50 mΩ Resistance Gate Threshold Voltage VDS = VGS; ID = 9.8mA 3.0 4.75 2.25 4.75 1.75 4.75 1.25 4.75 V Zero Gate Voltage Drain Current VDS = 60V; VGS = 0V 10 10 10 10 µA Gate-to-Source Leakage VGS = ±15V; VDS = 0V –100 100 –100 100 –100 100 –100 100 nA Total Gate Charge VGS = 8V, VDS = 30V, ID = 200mA 40 40 40 40 nC Schottky Diode Forward Voltage VGS = 0V, ID = –0.2A 0.65 0.65 0.65 0.65 V VGS = 0V, ID = –5A 0.8 0.8 0.8 0.8 V
Note 1:
Stress beyond those listed under Absolute Maximum Ratings may
Note 4:
Dice that are not qualified by Linear Technology with a can sample cause damage to the device. Exposure to any Absolute Maximum Rating are guaranteed to meet specifications in Table 1 only. Dice qualified by condition for extended periods may affect device reliability and lifetime. Linear Technology with a can sample meet specifications in all tables.
Note 2:
The RH411MK is tested under pulse current conditions such that
Note 5:
Can sample are tested in a 4-Lead TO-3 package. TJ ≈ TA.
Note 3:
Dice are probe tested at 25°C to the limits shown in Table 1. Dice are tested under low current conditions which assure full high current specifications when assembled in packaging systems approved by Linear Technology. 9 Document Outline Description Typical Application Description absolute Maximum Ratings Dice Pinout Table 1: Dice/DWF Electrical Test Limits Table 2: Electrical Characteristics Table 3: Electrical Characteristics Table 4: Electrical Test Requirements Total Dose Bias Circuit — Run Mode Total Dose Bias Circuit — Shutdown Mode Burn-in Circuit — run mode Typical Performance characteristics DESCRIPTION ABSOLUTE MAXIMUM RATINGS TABLE 1 Dice/DWF Electrical Test Limits TABLE 2 Electrical Characteristics TABLE 3 Electrical Characteristics Table 5. Electrical Test Requirements Total Dose Bias Circuit Burn-In Circuit Typical Performance Characteristics preirradiation Typical Performance Characteristics Post-irradiation Revision History