Datasheet LT1169 (Analog Devices) - 6
| Hersteller | Analog Devices |
| Beschreibung | Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp |
| Seiten / Seite | 12 / 6 — TYPICAL PERFOR A CE CHAR C. A TERISTICS. Small-Signal Transient Response. … |
| Dateiformat / Größe | PDF / 302 Kb |
| Dokumentensprache | Englisch |
TYPICAL PERFOR A CE CHAR C. A TERISTICS. Small-Signal Transient Response. Large-Signal Transient Response
Modelllinie für dieses Datenblatt
Textversion des Dokuments
LT1169
W U TYPICAL PERFOR A CE CHAR C A TERISTICS Small-Signal Transient Response Large-Signal Transient Response Supply Current vs Supply Voltage
6 25°C DIV DIV –55°C 5V/ 20mV/ 5 125°C LT1169 • TPC13 A LT1169 • TPC14 V = 1 2µs/DIV AV = 1 5µs/DIV SUPPLY CURRENT PER AMPLIFIER (mA) CL = 10pF CL = 10pF VS = ±15V, ±5V VS = ±15V 4 0 ± 5 ±10 ±15 ±20 SUPPLY VOLTAGE (V) LT1169 • TPC15
Output Voltage Swing Slew Rate and Gain-Bandwidth vs Load Current Capacitive Load Handling Product vs Temperature
GAIN-BANDWIDTH PRODUCT (f V+ – 0.8 50 6 12 125°C –1.0 25°C VS = ±15V TA = 25°C 5 10 –1.2 –55°C 40 RL ≥ 10k V SLEW RATE – 1.4 O = 100mVP-P AV = +10, RF = 10k, CF = 20pF µs) 4 8 –1.6 30 V GAIN-BANDWIDTH S = ±5V TO ±20V 1.4 3 6 1.2 20 O OVERSHOOT (%) 2 4 = 100kHz)(MHz) 1.0 SLEW RATE (V/ –55°C AV = 1 OUTPUT VOLTAGE SWING (V) 0.8 10 1 2 0.6 25°C A 125°C V = 10 V– +0.4 0 0 0 –10 –8 –6 –4 –2 0 2 4 6 8 10 0.1 1 10 100 1000 10000 –75 –50 –25 0 25 50 75 100 125 ISINK I OUTPUT CURRENT (mA) SOURCE CAPACITIVE LOAD (pF) TEMPERATURE (°C) LT1169 • TPC16 LT1169 • TPC17 LT1169 • TPC18
Distribution of Offset Voltage Drift with Temperature Warm-Up Drift Channel Separation vs Frequency
50 1000 140 VS = ±15V TA = 25°C 188 OP AMPS VS = ±15V 120 40 µV) 800 N8 PACKAGE LIMITED BY 100 THERMAL INTERACTION 30 600 80 LIMITED BY 20 60 400 PIN-TO-PIN CAPACITANCE PERCENT OF UNITS 40 T 10 CHANNEL SEPARATION (dB) A = 25°C 200 VS = ±15V CHANGE IN OFFSET VOLTAGE ( 20 RL = 1k VO = 10VP-P 0 0 0 –50 –40 –30 –20 –10 0 10 20 30 0 1 2 3 4 5 6 10 100 1k 10k 100k 1M 10M OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C) TIME AFTER POWER ON (MIN) FREQUENCY (Hz) LT1169 • TPC19 LT1169 • TPC20 LT1169 • TPC21 6
W U TYPICAL PERFOR A CE CHAR C A TERISTICS Small-Signal Transient Response Large-Signal Transient Response Supply Current vs Supply Voltage
6 25°C DIV DIV –55°C 5V/ 20mV/ 5 125°C LT1169 • TPC13 A LT1169 • TPC14 V = 1 2µs/DIV AV = 1 5µs/DIV SUPPLY CURRENT PER AMPLIFIER (mA) CL = 10pF CL = 10pF VS = ±15V, ±5V VS = ±15V 4 0 ± 5 ±10 ±15 ±20 SUPPLY VOLTAGE (V) LT1169 • TPC15
Output Voltage Swing Slew Rate and Gain-Bandwidth vs Load Current Capacitive Load Handling Product vs Temperature
GAIN-BANDWIDTH PRODUCT (f V+ – 0.8 50 6 12 125°C –1.0 25°C VS = ±15V TA = 25°C 5 10 –1.2 –55°C 40 RL ≥ 10k V SLEW RATE – 1.4 O = 100mVP-P AV = +10, RF = 10k, CF = 20pF µs) 4 8 –1.6 30 V GAIN-BANDWIDTH S = ±5V TO ±20V 1.4 3 6 1.2 20 O OVERSHOOT (%) 2 4 = 100kHz)(MHz) 1.0 SLEW RATE (V/ –55°C AV = 1 OUTPUT VOLTAGE SWING (V) 0.8 10 1 2 0.6 25°C A 125°C V = 10 V– +0.4 0 0 0 –10 –8 –6 –4 –2 0 2 4 6 8 10 0.1 1 10 100 1000 10000 –75 –50 –25 0 25 50 75 100 125 ISINK I OUTPUT CURRENT (mA) SOURCE CAPACITIVE LOAD (pF) TEMPERATURE (°C) LT1169 • TPC16 LT1169 • TPC17 LT1169 • TPC18
Distribution of Offset Voltage Drift with Temperature Warm-Up Drift Channel Separation vs Frequency
50 1000 140 VS = ±15V TA = 25°C 188 OP AMPS VS = ±15V 120 40 µV) 800 N8 PACKAGE LIMITED BY 100 THERMAL INTERACTION 30 600 80 LIMITED BY 20 60 400 PIN-TO-PIN CAPACITANCE PERCENT OF UNITS 40 T 10 CHANNEL SEPARATION (dB) A = 25°C 200 VS = ±15V CHANGE IN OFFSET VOLTAGE ( 20 RL = 1k VO = 10VP-P 0 0 0 –50 –40 –30 –20 –10 0 10 20 30 0 1 2 3 4 5 6 10 100 1k 10k 100k 1M 10M OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C) TIME AFTER POWER ON (MIN) FREQUENCY (Hz) LT1169 • TPC19 LT1169 • TPC20 LT1169 • TPC21 6