Datasheet LTC6084, LTC6085 (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | Dual/Quad 1.5MHz, Rail-to-Rail, CMOS Amplifiers |
| Seiten / Seite | 16 / 4 — The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply … |
| Dateiformat / Größe | PDF / 247 Kb |
| Dokumentensprache | Englisch |
The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply over the full operating
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LTC6084/LTC6085
The ELECTRICAL CHARACTERISTICS
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. Test conditions are V+ = 2.5V, V– = 0V, VCM = 0.5V unless otherwise noted. C SUFFIX H SUFFIX SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
ISC Output Short-Circuit Source and Sink 7.7 12.5 7.7 12.5 mA Current l 6 4.5 mA SR Slew Rate AV = 1 0.5 0.5 V/μs GBW Gain Bandwidth Product RLOAD = 50k, VCM = 1.25V 0.9 1.5 0.9 1.5 MHz (fTEST = 10kHz) l 0.7 0.6 Φ0 Phase Margin RL = 10k, CL = 150pF, AV = 1 45 45 Deg tS Settling Time 0.1% VSTEP = 1V, AV = 1 6 6 μs IS Supply Current No Load 110 130 110 130 μA (Per Amplifi er) l 140 145 μA Shutdown Current Shutdown, VSHDNx ≤ 0.5V l 0.2 0.3 0.2 0.5 μA (Per Amplifi er) VS Supply Voltage Range Guaranteed by the PSRR Test l 2.5 5.5 2.5 5.5 V Channel Separation fS = 10kHz –120 –120 dB Shutdown Logic SHDNx High 1.8 1.8 V SHDNx Low 0.5 0.5 V tON Turn On Time VSHDNx = 0.5V to 1.8V 7 7 μs tOFF Turn Off Time VSHDNx = 1.8V to 0.5V 1 1 μs Leakage of SHDN Pin VSHDNx = 0V l 0.2 0.3 0.2 0.5 μA
The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. Test conditions are V+ = 5V, V– = 0V, VCM = 0.5V unless otherwise noted. C SUFFIX H SUFFIX SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
VOS Offset Voltage (Note 5) LTC6084MS8, LTC6085GN 300 750 300 750 μV LTC6084DD, LTC6085DHC 300 1100 300 1100 μV LTC6084MS8, LTC6085GN l 900 1100 μV LTC6084DD, LTC6085DHC l 1350 1600 μV ΔV l OS/ΔT Input Offset Voltage Drift 2 5 2 5 μV/°C (Note 6) IB Input Bias Current 1 1 pA (Notes 5, 7) l 40 750 pA IOS Input Offset Current 0.5 0.5 pA (Notes 5, 7) l 30 150 pA en Input Noise Voltage f = 1kHz 31 31 nV/√Hz Density f = 10kHz 27 27 nV/√Hz Input Noise Voltage 0.1Hz to 10Hz 3 3 μVP-P in Input Noise Current 0.56 0.56 fA/√Hz Density (Note 8) Input Common Mode l V– V+ V– V+ V Range CIN Input Capacitance f = 100kHz Differential Mode 5 5 pF Common Mode 9 9 pF 60845fa 4
The ELECTRICAL CHARACTERISTICS
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. Test conditions are V+ = 2.5V, V– = 0V, VCM = 0.5V unless otherwise noted. C SUFFIX H SUFFIX SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
ISC Output Short-Circuit Source and Sink 7.7 12.5 7.7 12.5 mA Current l 6 4.5 mA SR Slew Rate AV = 1 0.5 0.5 V/μs GBW Gain Bandwidth Product RLOAD = 50k, VCM = 1.25V 0.9 1.5 0.9 1.5 MHz (fTEST = 10kHz) l 0.7 0.6 Φ0 Phase Margin RL = 10k, CL = 150pF, AV = 1 45 45 Deg tS Settling Time 0.1% VSTEP = 1V, AV = 1 6 6 μs IS Supply Current No Load 110 130 110 130 μA (Per Amplifi er) l 140 145 μA Shutdown Current Shutdown, VSHDNx ≤ 0.5V l 0.2 0.3 0.2 0.5 μA (Per Amplifi er) VS Supply Voltage Range Guaranteed by the PSRR Test l 2.5 5.5 2.5 5.5 V Channel Separation fS = 10kHz –120 –120 dB Shutdown Logic SHDNx High 1.8 1.8 V SHDNx Low 0.5 0.5 V tON Turn On Time VSHDNx = 0.5V to 1.8V 7 7 μs tOFF Turn Off Time VSHDNx = 1.8V to 0.5V 1 1 μs Leakage of SHDN Pin VSHDNx = 0V l 0.2 0.3 0.2 0.5 μA
The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. Test conditions are V+ = 5V, V– = 0V, VCM = 0.5V unless otherwise noted. C SUFFIX H SUFFIX SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
VOS Offset Voltage (Note 5) LTC6084MS8, LTC6085GN 300 750 300 750 μV LTC6084DD, LTC6085DHC 300 1100 300 1100 μV LTC6084MS8, LTC6085GN l 900 1100 μV LTC6084DD, LTC6085DHC l 1350 1600 μV ΔV l OS/ΔT Input Offset Voltage Drift 2 5 2 5 μV/°C (Note 6) IB Input Bias Current 1 1 pA (Notes 5, 7) l 40 750 pA IOS Input Offset Current 0.5 0.5 pA (Notes 5, 7) l 30 150 pA en Input Noise Voltage f = 1kHz 31 31 nV/√Hz Density f = 10kHz 27 27 nV/√Hz Input Noise Voltage 0.1Hz to 10Hz 3 3 μVP-P in Input Noise Current 0.56 0.56 fA/√Hz Density (Note 8) Input Common Mode l V– V+ V– V+ V Range CIN Input Capacitance f = 100kHz Differential Mode 5 5 pF Common Mode 9 9 pF 60845fa 4