Datasheet LT1034-1.2, LT1034-2.5 (Analog Devices) - 3

LT1034-1.2/LT1034-2.5
ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. LT1034-1.2 LT1034-2.5 PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Reverse Breakdown Voltage IR = 100µA 1.210 1.225 1.240 2.46 2.5 2.54 V ● 1.205 1.225 1.245 2.43 2.5 2.57 V Reverse Breakdown Change (Note 4) 0.5 2.0 1.0 3.0 mV with Current ● 1.0 4.0 1.5 6.0 mV 2mA ≤ IR ≤ 20mA 4.0 8.0 6.0 16.0 mV ● 6.0 15.0 10.0 20.0 mV Minimum Operating Current ● 10 20 15 30 µA Temperature Coefficient IR = 100µA LT1034B ● 10 20 10 20 ppm/°C LT1034 20 40 20 40 ppm/°C Reverse Dynamic Impedance (Note 3) IR = 100µA 0.25 1.0 0.5 1.5 Ω ● 0.50 2.0 1.0 2.5 Ω Low Frequency Noise IR = 100µA, 0.1Hz ≤ F ≤ 10Hz ● 4 6 µVP-P Long-Term Stability IR = 100µA 20 20 ppm/√khrs
The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. 7V Reference. PARAMETER CONDITIONS MIN TYP MAX UNITS
Reverse Breakdown Voltage IR = 100µA 6.80 7.0 7.3 V ● 6.75 7.0 7.4 V Reverse Breakdown Change 100µA ≤ IR ≤ 1mA 90 140 mV with Current 100µA ≤ IR ≤ 1mA ● 100 190 mV 1mA ≤ IR ≤ 20mA 160 250 mV 1mA ≤ IR ≤ 20mA ● 200 350 mV Temperature Coefficient IR = 100µA ● 40 ppm/°C Long-Term Stability IR = 100µA 20 ppm/√khrs
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 3:
This parameter guaranteed by “reverse breakdown change with of a device may be impaired. current” test.
Note 2:
Forward biasing either diode will affect the operation of the other
Note 4:
For the LT1034-1.2: 20µA ≤ IR ≤ 2mA. For the LT1034-2.5: diode. 30µA ≤ IR ≤ 2mA. 1034fe 3