Datasheet LT1389 (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungNanopower Precision Shunt Voltage Reference
Seiten / Seite12 / 4 — 5V ELECTRICAL CHARACTERISTICS The. denotes specifications which apply …
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5V ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over the full operating

5V ELECTRICAL CHARACTERISTICS The denotes specifications which apply over the full operating

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LT1389
5V ELECTRICAL CHARACTERISTICS The

denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS
Reverse Breakdown Voltage LT1389BCS8 (IR = 1.5µA) 4.99625 5.000 5.00375 V – 0.075 0.075 % LT1389BCS8 (IR = 1.5µA) ● 4.979 5.000 5.021 V – 0.42 0.42 % Reverse Breakdown Change 1.5µA ≤ IR ≤ 200µA 0.2 1.5 mV with Current (Note 4) ● 0.2 3 mV 200µA ≤ IR ≤ 2mA 0.3 4 mV ● 0.3 6 mV Minimum Operating Current ● 1 µA Temperature Coefficient IR = 1.5µA ● 12 50 ppm/°C Reverse Dynamic Impedance (Note 5) 1.5µA ≤ IR ≤ 2mA 0.75 2 Ω ● 0.75 3 Ω Low Frequency Noise (Note 6) IR = 1.5µA, 0.1Hz ≤ f ≤ 10Hz 100 µVP-P
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 4:
Output requires 0.1µF for operating current greater than 1mA. of a device may be impaired.
Note 5:
This parameter is guaranteed by “reverse breakdown change with
Note 2:
If the part is stored outside of the specific operating temperature current” test. range, the output may shift due to hysteresis.
Note 6:
Peak-to-peak noise is measured with a single highpass filter at
Note 3:
ESD (Electrostatic Discharge) sensitive device. Use proper ESD 0.1Hz and 2-pole lowpass filter at 10Hz. handling precautions. 4