Datasheet RH1034-1.2 (Analog Devices) - 2
| Hersteller | Analog Devices |
| Beschreibung | Micropower Dual Reference |
| Seiten / Seite | 4 / 2 — TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation). TA = 25°C. SUB-. … |
| Dateiformat / Größe | PDF / 79 Kb |
| Dokumentensprache | Englisch |
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation). TA = 25°C. SUB-. –55°C ≤ TA ≤ 125°C SUB-. SYMBOL PARAMETER. CONDITIONS
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RH1034-1.2
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS 1.2V Reference
VZ Reverse Breakdown Voltage IR = 100μA 1.210 1.240 1 1.195 1.255 2, 3 V ΔVZ Reverse Breakdown Voltage 20μA ≤ IR ≤ 2mA 2.0 1 4.0 2, 3 mV ΔIR Change with Current 2mA ≤ IR ≤ 20mA 8.0 1 15.0 2, 3 mV Minimum Operating Current 20 1 30 2, 3 μA Temperature Coeffi cient IR = 100μA 60 1 60 2, 3 ppm/°C rz Reverse Dynamic IR = 100μA 3 1.0 1 2.0 2, 3 Ω Impedance Low Frequency Noise IR = 100μA, 0.1Hz ≤ f ≤ 10Hz 4 μVP-P Long-Term Stability IR = 100μA 20 ppm/√kHrs
7V Reference
VZ Reverse Breakdown Voltage IR = 100μA 6.70 7.30 1 6.60 7.40 2, 3 V ΔVZ Reverse Breakdown Voltage 100μA ≤ IR ≤ 1mA 140 1 190 2, 3 mV ΔIR Change with Current 1mA ≤ IR ≤ 20mA 250 1 350 2, 3 mV Temperature Coeffi cient IR = 100μA 60 ppm/°C Long-Term Stability IR = 100μA 20 ppm/√kHrs
TABLE 2: ELECTRICAL CHARACTERISTICS (Postirradiation) TA = 25°C. 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDTIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.2V Reference
VZ Reverse Breakdown IR = 100μA 1.202 1.305 1.202 1.315 1.202 1.325 1.202 1.340 1.202 1.370 V Voltage ΔVZ Reverse Breakdown 20μA ≤ IR ≤ 2mA 7.0 7.5 8.5 10.0 12.5 mV ΔIR Voltage Change with 2mA ≤ IR ≤ 20mA 15.0 16.5 18.5 22.5 30.5 mV Current rz Reverse Dynamic IR = 100μA 3 3.5 3.75 4.25 5.0 6.25 Ω Impedance
7V Reference
VZ Reverse Breakdown IR = 100μA 6.686 7.314 6.686 7.314 6.686 7.314 6.686 7.324 6.686 7.334 V Voltage ΔVZ Reverse Breakdown 100μA ≤ IR ≤ 1mA 175 175 175 175 175 mV ΔIR Voltage Change with 1mA ≤ IR ≤ 20mA 300 300 300 300 300 mV Current
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 2:
Forward biasing either diode will affect the operation of the other may cause permanent damage to the device. Exposure to any Absolute diode. Maximum Rating condition for extended periods may affect device
Note 3:
This parameter guaranteed by “reverse breakdown voltage change reliability and lifetime. with current” test. 2
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS 1.2V Reference
VZ Reverse Breakdown Voltage IR = 100μA 1.210 1.240 1 1.195 1.255 2, 3 V ΔVZ Reverse Breakdown Voltage 20μA ≤ IR ≤ 2mA 2.0 1 4.0 2, 3 mV ΔIR Change with Current 2mA ≤ IR ≤ 20mA 8.0 1 15.0 2, 3 mV Minimum Operating Current 20 1 30 2, 3 μA Temperature Coeffi cient IR = 100μA 60 1 60 2, 3 ppm/°C rz Reverse Dynamic IR = 100μA 3 1.0 1 2.0 2, 3 Ω Impedance Low Frequency Noise IR = 100μA, 0.1Hz ≤ f ≤ 10Hz 4 μVP-P Long-Term Stability IR = 100μA 20 ppm/√kHrs
7V Reference
VZ Reverse Breakdown Voltage IR = 100μA 6.70 7.30 1 6.60 7.40 2, 3 V ΔVZ Reverse Breakdown Voltage 100μA ≤ IR ≤ 1mA 140 1 190 2, 3 mV ΔIR Change with Current 1mA ≤ IR ≤ 20mA 250 1 350 2, 3 mV Temperature Coeffi cient IR = 100μA 60 ppm/°C Long-Term Stability IR = 100μA 20 ppm/√kHrs
TABLE 2: ELECTRICAL CHARACTERISTICS (Postirradiation) TA = 25°C. 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDTIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.2V Reference
VZ Reverse Breakdown IR = 100μA 1.202 1.305 1.202 1.315 1.202 1.325 1.202 1.340 1.202 1.370 V Voltage ΔVZ Reverse Breakdown 20μA ≤ IR ≤ 2mA 7.0 7.5 8.5 10.0 12.5 mV ΔIR Voltage Change with 2mA ≤ IR ≤ 20mA 15.0 16.5 18.5 22.5 30.5 mV Current rz Reverse Dynamic IR = 100μA 3 3.5 3.75 4.25 5.0 6.25 Ω Impedance
7V Reference
VZ Reverse Breakdown IR = 100μA 6.686 7.314 6.686 7.314 6.686 7.314 6.686 7.324 6.686 7.334 V Voltage ΔVZ Reverse Breakdown 100μA ≤ IR ≤ 1mA 175 175 175 175 175 mV ΔIR Voltage Change with 1mA ≤ IR ≤ 20mA 300 300 300 300 300 mV Current
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 2:
Forward biasing either diode will affect the operation of the other may cause permanent damage to the device. Exposure to any Absolute diode. Maximum Rating condition for extended periods may affect device
Note 3:
This parameter guaranteed by “reverse breakdown voltage change reliability and lifetime. with current” test. 2