Datasheet LT1950 (Analog Devices) - 5
| Hersteller | Analog Devices |
| Beschreibung | Single Switch PWM Controller with Auxiliary Boost Converter |
| Seiten / Seite | 20 / 5 — TYPICAL PERFOR A CE CHARACTERISTICS. BLANK Override Threshold – ISENSE … |
| Dateiformat / Größe | PDF / 223 Kb |
| Dokumentensprache | Englisch |
TYPICAL PERFOR A CE CHARACTERISTICS. BLANK Override Threshold – ISENSE Maximum Threshold vs
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LT1950
W U TYPICAL PERFOR A CE CHARACTERISTICS BLANK Override Threshold – ISENSE Maximum Threshold vs Minimum VIN Start-Up Voltage vs Temperature Temperature (VIN2 Boosted) VIN IQ vs Temperature
40 3.00 3.1 2.9 35 2.75 2.7 30 2.5 (mA) 25 2.50 Q 2.3 I START-UP VOLTAGE (V) INV IN 2.1 20 MAXIMUM THRESHOLD (mV) 2.25 1.9 BLANK OVERRIDE THRESHOLD SENSE 15 –I MINIMUM V 1.7 10 2.00 1.5 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 1950 G07 1950 G08 1950 G09
SHDN Input Current *(–1) vs SHDN Current Hysteresis vs GATE Rise/Fall Time vs Temperature Temperature GATE Capacitance
14 11 125 TA = 25°C 12 A) 10 A) µ µ 100 SHDN = SHDN THRESHOLD + 70mV 9 tr 10 8 75 8 tf 7 6 50 6 4 SHDN = SHDN THRESHOLD – 100mV 5 GATE RISE/FALL TIME (ns) 25 SHDN INPUT CURRENT*(–1) ( 2 SHDN CURRENT HYSTERESIS ( 4 0 3 0 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 TEMPERATURE (°C) TEMPERATURE (°C) GATE CAPACITANCE (pF) 1950 G10 1950 G11 1950 G12
V V IN2: GATE Enable IN2: BOOST Disable BOOST Switch ILIMIT vs vs Temperature vs Temperature Temperature
9.2 13.0 250 12.5 8.7 12.0 200 (mA) 11.5 GATE ENABLE LIMIT BOOST DISABLE 8.2 11.0 150 GATE ENABLE (V) 10.5 HYSTERESIS HYSTERESIS BOOST DISABLE (V) IN2 V IN2 7.7 V 10.0 BOOST SWITCH I 100 BOOST RE-ENABLE GATE DISABLE 9.5 7.2 9.0 50 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 1950 G13 1950 G14 1950 G15 1950fa 5
W U TYPICAL PERFOR A CE CHARACTERISTICS BLANK Override Threshold – ISENSE Maximum Threshold vs Minimum VIN Start-Up Voltage vs Temperature Temperature (VIN2 Boosted) VIN IQ vs Temperature
40 3.00 3.1 2.9 35 2.75 2.7 30 2.5 (mA) 25 2.50 Q 2.3 I START-UP VOLTAGE (V) INV IN 2.1 20 MAXIMUM THRESHOLD (mV) 2.25 1.9 BLANK OVERRIDE THRESHOLD SENSE 15 –I MINIMUM V 1.7 10 2.00 1.5 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 1950 G07 1950 G08 1950 G09
SHDN Input Current *(–1) vs SHDN Current Hysteresis vs GATE Rise/Fall Time vs Temperature Temperature GATE Capacitance
14 11 125 TA = 25°C 12 A) 10 A) µ µ 100 SHDN = SHDN THRESHOLD + 70mV 9 tr 10 8 75 8 tf 7 6 50 6 4 SHDN = SHDN THRESHOLD – 100mV 5 GATE RISE/FALL TIME (ns) 25 SHDN INPUT CURRENT*(–1) ( 2 SHDN CURRENT HYSTERESIS ( 4 0 3 0 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 TEMPERATURE (°C) TEMPERATURE (°C) GATE CAPACITANCE (pF) 1950 G10 1950 G11 1950 G12
V V IN2: GATE Enable IN2: BOOST Disable BOOST Switch ILIMIT vs vs Temperature vs Temperature Temperature
9.2 13.0 250 12.5 8.7 12.0 200 (mA) 11.5 GATE ENABLE LIMIT BOOST DISABLE 8.2 11.0 150 GATE ENABLE (V) 10.5 HYSTERESIS HYSTERESIS BOOST DISABLE (V) IN2 V IN2 7.7 V 10.0 BOOST SWITCH I 100 BOOST RE-ENABLE GATE DISABLE 9.5 7.2 9.0 50 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 1950 G13 1950 G14 1950 G15 1950fa 5