Datasheet ADR431-EP, ADR434-EP, ADR435-EP (Analog Devices)

Low Noise XFET Voltage References with Current Sink and Source Capability Data Sheet ADR431-EP/ ADR434-EP /ADR435-EP FEATURES PIN CONFIGURATION Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p at 2.5 VO typical DNC 1 ADR431-EP/ 8 DNC (ADR431-EP) ADR434-EP/ VIN 2 7 COMP No external capacitor required ADR435-EP NIC 3 6 VOUT Low temperature coefficient TOP VIEW GND 4 5 TRIM (Not to Scale) 5 ppm/°C maximum (ADR431-EP) 3 ppm/°C maximum (ADR434-EP/ ADR435-EP) NOTES
01 0
1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY.
8-
Load regulation: 15 ppm/mA maximum
21
2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.
09
Line regulation: 20 ppm/V maximum
Figure 1. 8-Lead SOIC_N (R-8)
Wide supply voltage operating range: 4.5 V to 18 V (ADR431-EP) High output source and sink current: +10 mA and −10 mA ENHANCED PRODUCT FEATURES Supports defense and aerospace applications, aerospace qualified electronic component (AQEC) standard Military temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly and test site One fabrication site Enhanced product change notification Qualification data available on request APPLICATIONS Precision data acquisition systems High resolution data converters Optical control circuits Precision instruments GENERAL DESCRIPTION
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage The ADR431-EP/ADR434-EP/ADR435-EP have the capability to references featuring low noise, high accuracy, and low temperature source up to +10 mA of output current and sink up to −10 mA. drift performance. Using Analog Devices, Inc., patented temperature They also come with a trim terminal to adjust the output voltage drift curvature correction and eXtra implanted junction FET over a 0.5% range without compromising performance. (XFET) technology, voltage change vs. temperature nonlinearity The ADR431-EP/ADR434-EP/ADR435-EP are available in an in the ADR431-EP/ADR434-EP/ADR435-EP is minimized. 8-lead narrow SOIC package and are specified over the military The XFET references operate at lower current (800 μA) and temperature range of −55°C to +125°C. lower supply voltage headroom (2 V) than buried Zener Additional application and technical information can be found in references. Buried Zener references require more than 5 V the ADR430/ADR431/ADR433/ADR434/ADR435 data sheet. headroom for operation. The ADR431-EP/ADR434-EP/ ADR435-EP XFET references are optimal low noise solutions for
Table 1. Selection Guide
5 V systems.
Output Accuracy Temperature Model Voltage (V) (mV) Coefficient (ppm/°C)
ADR431T-EP 2.500 ±1.0 5 ADR434T-EP 4.096 ±1.5 3 ADR435T-EP 5.000 ±2.0 3
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Document Outline Features Enhanced Product Features Applications Pin Configuration General Description Revision History Specifications ADR431-EP Electrical Characteristics ADR434-EP Electrical Characteristics ADR435-EP Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Outline Dimensions Ordering Guide