Datasheet IRF3205PbF (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 8 / 4 — Fig 5. Fig 6. Fig 7. Fig. Fig 8 |
| Dateiformat / Größe | PDF / 221 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig 7. Fig. Fig 8
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IRF3205PbF 6000 16 VGS = 0V, f = 1 MHZ ID = 62A C ) iss = Cgs + Cgd, Cds SHORTED V V = 44V 14 DS 5000 C V = 27V rss = Cgd DS V = 11V C DS oss = Cds + Cgd ) tage ( 12 Fp 4000 (ec Ciss 10 n ce Vol ati 3000 ca 8 Sour paC , 6 2000 C Coss ate-to- G 4 1000 GS Crss V , 2 0 0 1 10 100 0 20 40 60 80 100 120 Q , Total Gate Charge (nC) V G DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED ) BY R A DS(on) ( T = 175 C J ° 100 1000 ) A urrent ( n C 10us rai urrent 10 100 n C se D rai 100us D ever T = 25 C J ° R I , D 1ms 1 10 SD 10ms I , T = 25 C ° C T = 175 C ° J V = 0 V GS Single Pulse 0.1 1 0.2 0.8 1.4 2.0 2.6 1 10 100 1000 V ,Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) SD DS
Fig 7. Fig
Typical Source-Drain Typical Diode Source-Drain
Fig 8.
Maximum Safe Operating Area Forward Voltage Forward 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED ) BY R A DS(on) ( T = 175 C J ° 100 1000 ) A urrent ( n C 10us rai urrent 10 100 n C se D rai 100us D ever T = 25 C J ° R I , D 1ms 1 10 SD 10ms I , T = 25 C ° C T = 175 C ° J V = 0 V GS Single Pulse 0.1 1 0.2 0.8 1.4 2.0 2.6 1 10 100 1000 V ,Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) SD DS
Fig 7. Fig
Typical Source-Drain Typical Diode Source-Drain
Fig 8.
Maximum Safe Operating Area Forward Voltage Forward 4 www.irf.com