NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MBB280 MBB281 50 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 40 GUM G UM 30 30 MSG MSG 20 20 Gmax 10 G max 10 0 0 10 102 103 104 10 102 103 104 f (MHz) f (MHz) IC = 5 mA; VCE = 10 V. IC = 15 mA; VCE = 10 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Gmax = maximum available gain. Fig.9 Gain as a function of frequency; Fig.10 Gain as a function of frequency; typical values. typical values. MBB277 MBB276 40 30 handbook, halfpage handbook, halfpage B S B S (mS) F = 3.5 dB (mS) 20 20 3.0 F = 3.0 dB 10 2.5 2.5 0 0 2.0 1.8 2.4 1.7 10 20 20 40 30 0 20 40 60 80 0 20 40 60 G (mS) G (mS) S S IC = 4 mA; VCE = 10 V; f = 800 MHz. IC = 14 mA; VCE = 10 V; f = 800 MHz. Fig.11 Circles of constant noise figure; Fig.12 Circles of constant noise figure; typical values. typical values. Rev. 04 - 2 March 2009 6 of 12 Document Outline FEATURES DESCRIPTION APPLICATIONS PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history