Datasheet Si4435BDY (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | P-Channel 30-V (D-S) MOSFET |
| Seiten / Seite | 6 / 3 — Si4435BDY. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain Current. … |
| Dateiformat / Größe | PDF / 90 Kb |
| Dokumentensprache | Englisch |
Si4435BDY. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain Current. Capacitance. Gate Charge
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Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.040 2400 0.035 ) Ω ( 0.030 1800 VGS = 4.5 V Ciss 0.025 esistance -R 0.020 1200 V V - On GS = 10 0.015 - Capacitance (pF) C DS(on) R 0.010 600 Coss Crss 0.005 0.000 0 0 10 20 30 40 50 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 1.6 VDS = 15 V V GS = 10 V ID = 9.1 A I D = 9.1 A 8 1.4 oltage (V) V 6 ed) 1.2 maliz On-Resistance 4 - (Nor 1.0 (on) - Gate-to-Source DSR GS 2 0.8 V 0 0.6 0 10 20 30 40 - 50 - 25 0 2 5 5 0 7 5 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
50 0.10 ) 0.08 Ω( TJ = 150 °C 10 0.06 ID = 9.1 A esistance -R TJ = 25 °C - On 0.04 - Source Current (A) I S DS(on)R 0.02 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Document Number: 72123 www.vishay.com S09-0767-Rev. D, 04-May-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.040 2400 0.035 ) Ω ( 0.030 1800 VGS = 4.5 V Ciss 0.025 esistance -R 0.020 1200 V V - On GS = 10 0.015 - Capacitance (pF) C DS(on) R 0.010 600 Coss Crss 0.005 0.000 0 0 10 20 30 40 50 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 1.6 VDS = 15 V V GS = 10 V ID = 9.1 A I D = 9.1 A 8 1.4 oltage (V) V 6 ed) 1.2 maliz On-Resistance 4 - (Nor 1.0 (on) - Gate-to-Source DSR GS 2 0.8 V 0 0.6 0 10 20 30 40 - 50 - 25 0 2 5 5 0 7 5 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
50 0.10 ) 0.08 Ω( TJ = 150 °C 10 0.06 ID = 9.1 A esistance -R TJ = 25 °C - On 0.04 - Source Current (A) I S DS(on)R 0.02 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Document Number: 72123 www.vishay.com S09-0767-Rev. D, 04-May-09 3