Datasheet IRFZ44NPbF (Infineon) - 2
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 8 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Dateiformat / Größe | PDF / 232 Kb |
| Dokumentensprache | Englisch |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRFZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 25A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = 25A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 60 ––– ID = 25A ns td(off) Turn-Off Delay Time ––– 44 ––– RG = 12Ω tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1470 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 530 150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 49 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 160 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, max. junction temperature. (See fig. 11) TJ ≤ 175°C Starting T Pulse width ≤ 400µs; duty cycle ≤ 2%. J = 25°C, L = 0.48mH R This is a typical value at device destruction and represents G = 25Ω, IAS = 25A. (See Figure 12) operation outside rated limits. This is a calculated value limited to TJ = 175°C . 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 25A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = 25A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 60 ––– ID = 25A ns td(off) Turn-Off Delay Time ––– 44 ––– RG = 12Ω tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1470 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 530 150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 49 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 160 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, max. junction temperature. (See fig. 11) TJ ≤ 175°C Starting T Pulse width ≤ 400µs; duty cycle ≤ 2%. J = 25°C, L = 0.48mH R This is a typical value at device destruction and represents G = 25Ω, IAS = 25A. (See Figure 12) operation outside rated limits. This is a calculated value limited to TJ = 175°C . 2 www.irf.com