Datasheet TPS2410, TPS2411 (Texas Instruments) - 3

HerstellerTexas Instruments
BeschreibungFull Feaured N+1 and ORing Power Rail Controller
Seiten / Seite32 / 3 — TPS2410. TPS2411. www.ti.com. RECOMMENDED OPERATING CONDITIONS. MIN. NOM. …
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DokumentenspracheEnglisch

TPS2410. TPS2411. www.ti.com. RECOMMENDED OPERATING CONDITIONS. MIN. NOM. MAX. UNIT

TPS2410 TPS2411 www.ti.com RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT

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TPS2410 TPS2411 www.ti.com
.. SLVS727C – NOVEMBER 2006 – REVISED JUNE 2009
RECOMMENDED OPERATING CONDITIONS
voltages are referenced to GND (unless otherwise noted)
MIN NOM MAX UNIT
V (1) DD = V(C) 3 16.5 A, C Input voltage range TPS2410 V 3 ≤ VDD ≤ 16.5 V 0.8 16.5 A to C Operating voltage(2) 5 V OV, UV Voltage range 0 5.25 V STAT, PG, FLTB Continuous sinking current 6.8 mA R(RSET) Resistance range(3) 1.5 ∞ kΩ C(FLTR) Capacitance Range(3) 0 1000 pF C(BYP) Capacitance Range(3) (4) 800 2200 10k pF TJ Operating junction temperature –40 125 °C TA Operating free-air temperature –40 85 °C (1) VDD must exceed 3 V to meet GATE drive specifications (2) See the section "Bidirectional Blocking and Protection of C." (3) Voltage should not be applied to these pins. (4) Capacitors should be X7R, 20% or better
ELECTRICAL CHARACTERISTICS: TPS2410/11(1)(2) (3) (4) (5) (6) (7)
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(A), V(C), VDD
VDD rising 2.25 2.5 VDD UVLO V Hysteresis 0.25 | I(A) |, Gate in active range 0.66 1 A current mA | I(A) |, Gate saturated high 0.1 C current | I(C) |, VAC ≤ 0.1 V 10 µA Worst case, gate in active range 4.25 6 VDD current mA Gate saturated high 1.2
UV / OV / PG
UV threshold voltage V(UV) rising, V(OV) = 0 V, PG goes high 0.583 0.6 0.615 V OV threshold voltage V(OV) rising, V(UV) = 1 V, PG goes low 0.583 0.6 0.615 V Response time 50-mV overdrive 0.3 0.6 µs Hysteresis V(UV) and V(OV) 7 mV PG sink current V(UV) = 0 V, V(OV) = 0 V, V(PG) = 0.4 V 4 mA UV / OV leakage current (source or sink) 1 µA PG leakage current (source or sink) V(UV) = 1 V, V(OV) = 0 V, 0 ≤ V(PG) ≤ 5 V 1 µA
FLTB
Sink current V(FLTB) = 0.4 V, V(GATE-)A = 0 V, V(A-C) = 0.1 V 4 mA V(A) = V(C) + 20 mV, V(GATE-A) falling until FLTB V(GATE-A) fault threshold 0.5 0.78 1 V switches low V(A-C) = 0.1 V, increase V(A-C) until FLTB switches V(A-C) fault threshold 0.325 0.425 0.525 V low Deglitch on assertion 3.4 ms Leakage current (source or sink) 1 µA (1) [3 V ≤ V(A) ≤ 18 V, V(C) = VDD] or [0.8 V ≤ V(A) ≤ 3 V, 3 V ≤ VDD ≤ 18 V] (2) C(FLTR) = open, C(BYP) = 2200 pF, R(RSET) = open, STAT = open, FLT = open (3) UV = 1 V, OV = GND (4) –40°C ≤ TJ ≤ 125°C (5) Positive currents are into pins (6) Typical values are at 25°C (7) All voltages are with respect to GND. Copyright © 2006–2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS2410 TPS2411 Document Outline FEATURES APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS DISSIPATION RATINGS RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS: TPS2410/11 DETAILED DESCRIPTION TYPICAL CHARACTERISTICS APPLICATION INFORMATION OVERVIEW TPS2410 vs TPS2411 – MOSFET CONTROL METHODS N+1 POWER SUPPLY – TYPICAL CONNECTION INPUT ORing – TYPICAL CONNECTION SYSTEM DESIGN AND BEHAVIOR WITH TRANSIENTS RECOMMENDED OPERATING RANGE TPS2410 REGULATION-LOOP STABILITY MOSFET SELECTION AND R(RSET) GATE DRIVE, CHARGE PUMP AND C(BYP) FAST COMPARATOR INPUT FILTERING – C(FLTR) UV, OV, AND PG VDD, BYP, and POWERING OPTIONS INPUT ORing AND STAT BIDIRECTIONAL BLOCKING AND PROTECTION OF C ORing EXAMPLES SUMMARIZED DESIGN PROCEDURE Layout Considerations